Effect of Types of Ga/Si(111) Reconstructed Structure on Growth Morphology of GaSb Island

Abstract

The effect of several types of the Ga/Si(111) reconstructed structure, which is used as a template for epitaxial growth, on the growth morphology of GaSb islands have been studied by ultrahigh-vacuum scanning tunneling microscopy and non-contact atomic force microscopy. The polygonal islands are spread over a wide surface area, although the large dome-shaped islands are locally formed on 11×11-and 6.3√3×6.3√3-Ga. The growth process is also changed by the types of template Ga/Si(111) surface. It is suggested that initial growth state affects the growth morphology and process of GaSb island.