Effect of ultrasonic strain on p-type silicon wafers

Abstract

In this paper, we attempt material manipulation of p-type silicon wafers by using dynamic stress with high frequency (called "ultrasonic strain"). A piezoelectric device is used as the source of a time-dependent external field. We have succeeded in manipulating the electrical resistance of a semiconductor p-type silicon wafer with ultrasonic strain with a frequency of 1 MHz. The magnitude of the variation in the electrical resistance was over 2.0 ' 10 3 Ω and approximately 1.0 ' 10 3 Ω, corresponding to quadruple and septuple the initial values in the p-type silicon wafers [110] and [100], respectively. The response speed against ultrasonic strain was very fast and was less than 0.2 s, which could yield the basis of a new switching-device mechanism.