Effect of ultraviolet light on fatigue of lead zirconate titanate thin-film capacitors

Lee, J.; Esayan, S. K.; Safari, A.; Ramesh, R.

doi:10.1063/1.112617

Cited by 46 publications

(18 citation statements)

References 15 publications

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“…The capacitors with the thickest top oxide layer (450 A) exhibited the best resistance to fatigue. There are several models explaining the origin of fatigue in ferroelectric thin films such as space charge layers at the interface [24], accumulation of charged particles at the interface [25], defect entrapment at the interface [19][20][21], and growth of conductive dendrites [26]. In addition, leakage current density studies showed that the capacitors with the thinner top oxide layer (150 A and 300 A) possessed similar leakage current density while those with 450 A thick top oxide layer were very leaky.…”

Section: Effects Of the Fatigue Reduction Layer Thickness In The Elecmentioning

confidence: 99%

Novel Electrode Barriers for High Density Ferroelectric Nonvolatile Memories

Desu¹,

Vedula²,

Bhatt³

et al. 2001

phys. stat. sol. (a)

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In this paper, we propose a new electrode-barrier structure for direct integration of lead zirconate titanate (PZT) based capacitors onto polysilicon plug for high density FRAM applications. The electrode-barrier structure is based on noble metal alloys (e.g. Pt-Rh, Pt-Ir, Pt-Ru) and their oxides (e.g. PtRhOx) which satisfy the needs for an excellent diffusion barrier as well as a high conducting electrode. It has been found that the PtRhOx/PtRh/PtRhOx electrode-barrier structure acts as a very good bottom electrode on poly-silicon plug. The bottom PtRhOx layer has shown excellent diffusion barrier properties for lead, oxygen and silicon up to processing temperatures of 700 C as established by Auger electron spectroscopy and Rutherford backscattering spectroscopy studies. The electrode barriers showed no hillock formation and PZT films deposited on this structure crystallized predominantly in the perovskite phase. The capacitors exhibited very good hysteresis properties with remnant polarization (P r ) of 16 mC/cm 2 , a coercive field (E c ) of 32 kV/cm, extremely low fatigue (after 1 Â 10 10 cycles) of 3-4%, imprint (after 3.3 Â 10 9 cycles) of 8-12%, retention (after 1 Â 10 5 s) of 2-3% and leakage current density (at 100 kV/cm) less than 10 --8 A/cm 2 . These electrode barriers hold excellent promise for application in high density FRAM capacitor over bit line (COB) structure.

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Section: Effects Of the Fatigue Reduction Layer Thickness In The Elecmentioning

confidence: 99%

Novel Electrode Barriers for High Density Ferroelectric Nonvolatile Memories

Desu¹,

Vedula²,

Bhatt³

et al. 2001

phys. stat. sol. (a)

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“…Polarization fatigue has been frequently investigated in many previous works using various models [5][6][7][8][9][10][11][12][13][14]. Domain pinning was reported and has been thought to be an important cause of the fatigue of ferroelectric materials, and the major mechanisms of domain pinning proposed can be classified into two categories: firstly, the defects with charges, such as oxygen vacancies, electronic or ionic charges, etc.…”

Section: Introductionmentioning

confidence: 99%

Domain and Microstructural Characterization of Ferroelectric Materials Using Transmission Electron Microscopy

2009

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Ferroelectric materials exhibit many intriguing properties, and their microstructures play very important roles. In this article, domain formation, microstructural features and domain dynamics in ferroelectric materials were investigated using optical microscopy and electron microscopy. Domain arrangements and their characteristics significantly influence their polarization switchability and therefore electrical properties. 90 • domain boundaries inclined or perpendicular to applied electric field may dissociate into new boundaries showing zig-zag characteristics. If new boundaries extended and intersected with other domain boundaries, high static electric energy polarization configuration (head-to-head or tail-to-tail) and lattice distortion can be produced, which seriously degrade material properties. The experimental results imply that suppression of domain multiplication may be necessary for many applications to prevent materials from degradation.

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“…It has been shown in classical works [2,3] that all ferroelectric materials demonstrate essential decreasing of the switching charge during ac voltage cycling known as fatigue phenomenon. In recent years this effect has been intensively studied in thin films, which are applied in ferroelectric memory devices [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. Knowledge of the fatigue origin is necessary to improve the film endurance essential for ferroelectric nonvolatile memories (FeRAM).…”

Section: Introductionmentioning

confidence: 99%

New Approach to Analysis of the Switching Current Data, Recorded During Conventional Hysteresis Measurements

Shur

Батурин

Shishkin

et al. 2003

Integrated Ferroelectrics

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The explanation of fatigue as a spatially non-uniform kinetic imprint due to evolution of the local threshold field distribution function has been proposed by us recently. In this paper we propose a new switching current analysis which allows to extract the distribution function from the data of conventional hysteresis loop measurements. Domain kinetics in slow-increasing field in spatially inhomogeneous ferroelectric was investigated by computer simulation. Domain arising and growth were considered under assumption that the threshold field for appearance of isolated nuclei is essentially higher than for nuclei at the domain wall. The obtained approach essentially differs from Preisach one. The proposed method has been applied for analysis of the switching current data measured during fatigue cycling in PZT and PLZT thin films. The fitting formula for dependence of switching charge and current maximum on the cycle number has been proposed and successively used for experimental data. The proposed method can accelerate the fatigue testing.

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Effect of ultraviolet light on fatigue of lead zirconate titanate thin-film capacitors

Cited by 46 publications

References 15 publications

Novel Electrode Barriers for High Density Ferroelectric Nonvolatile Memories

Novel Electrode Barriers for High Density Ferroelectric Nonvolatile Memories

Domain and Microstructural Characterization of Ferroelectric Materials Using Transmission Electron Microscopy

New Approach to Analysis of the Switching Current Data, Recorded During Conventional Hysteresis Measurements

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