Effect of uniaxial stress on the transport properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">TaSe</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>

Tritt, Terry M.; Stillwell, E. P.; Skove, M. J.

doi:10.1103/physrevb.34.6799

Cited by 29 publications

(13 citation statements)

References 17 publications

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“…2(c). The resistance dramatically decreases when cooling down, displaying a metallic behavior with residual resistivity ratio (RRR) (300 K)/ (2 K) = 23, which is similar to the literature [32].…”

Section: B Crystal Growth and Characterizationssupporting

confidence: 86%

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Large magnetoresistance in topological insulator candidate TaSe3

Zhang

Zhu

et al. 2020

AIP Advances

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Large unsaturated magnetoresistance (XMR) with magnitude ∼10 3 % is observed in topological insulator candidate TaSe 3 from our high field (up to 38 T) measurements.Two oscillation modes are detected associated with the bulk pockets from our Shubnikov-de Hass (SdH) measurements, consistent with our first-principles calculations. However, our SdH measurements fails to determine the existence of topological surface states in TaSe 3 , calling for more powerful means to detect on this compound. Moreover, our two-band model analysis exhibits that an imperfect density ratio / ≈ 0.9 accounts for XMR at T< 20 K. At T> 20 K, a sudden change of density of carriers suggests a reconstruction of the Fermi surface. Thus, TaSe 3 may provide an opportunity to allow us to observe XMR in a topological insulator and to exploit the potential interplay between the XMR and topological surface states for the first time.

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Section: B Crystal Growth and Characterizationssupporting

confidence: 86%

“…1(a). In previous works, single crystal TaSe 3 yields a residual resistance ratio (RRR) around 20 [32] and TaSe 3 nanowires claims a low resistivity and high breakdown current density [33][34][35]. In addition, TaSe 3 mesowires possibly host a charge density wave (CDW) at 65 K [36].…”

Section: Iintroductionmentioning

confidence: 99%

Large magnetoresistance in topological insulator candidate TaSe3

Zhang

Zhu

et al. 2020

AIP Advances

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“…The diffraction pattern can be well indexed on the basis of a trigonal structure with the lattice parameters a = 9.82160 Å, b = 3.49520 Å, c = 10.39720 Å, α = 90°, β = 106.3442° and γ = 90°, in the space group P2 1 /m (No. 11), consistent with that reported previously 29 . The schematic crystal structure in Fig.…”

Section: Methodssupporting

confidence: 93%

Bulk Fermi surface of the layered superconductor TaSe3 with three-dimensional strong topological state

et al. 2020

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High magnetic field transport measurements and ab initio calculations on the layered superconductor TaSe 3 have provided compelling evidences for the existence of a three-dimensional strong topological insulator state. Longitudinal magnetotransport measurements up to ~ 33 T unveiled striking Shubnikov-de Hass oscillations with two fundamental frequencies at 100 T and 175 T corresponding to a nontrivial electron Fermi pocket at the B point and a nontrivial hole Fermi pocket at the Γ point respectively in the Brillouin zone. However, calculations revealed one more electron 2 pocket at the B point, which was not detected by the magnetotransport measurements, presumably due to the limited carrier momentum relaxation time. Angle dependent quantum oscillations by rotating the sample with respect to the magnetic field revealed clear changes in the two fundamental frequencies, indicating anisotropic electronic Fermi pockets. The ab initio calculations gave the topological Z 2 invariants of (1; 100) and revealed a single Dirac cone on the (1 0 -1) surface at the point with helical spin texture at a constant-energy contour, suggesting a strong topological insulator state. The results demonstrate TaSe 3 an excellent platform to study the interplay between topological phase and superconductivity and a promising system for the exploration of topological superconductivity. † The authors contributed equally to this work.

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“…Surprisingly, selenium-deficient TaSe3 can be produced from even selenium-rich CVT conditions. [34,50,51] Stoichiometric TaSe3 has been isolated from high pressure conditions and selenium-flux growth. [33,52] Although selenium deficiency does not seem to affect the overall electrical conductivity of TaSe3 or its Tc, [15,37,43,[45][46][47] several studies indicate that doping can modify its electronic structure.…”

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confidence: 99%

Electrically Insulating Flexible Films with Quasi‐1D van der Waals Fillers as Efficient Electromagnetic Shields in the GHz and Sub‐THz Frequency Bands

et al. 2021

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Polymer composite films containing fillers comprising quasi‐1D van der Waals materials, specifically transition metal trichalcogenides with 1D structural motifs that enable their exfoliation into bundles of atomic threads, are reported. These nanostructures are characterized by extremely large aspect ratios of up to ≈106. The polymer composites with low loadings of quasi‐1D TaSe3 fillers (<3 vol%) reveal excellent electromagnetic interference shielding in the X‐band GHz and extremely high frequency sub‐THz frequency ranges, while remaining DC electrically insulating. The unique electromagnetic shielding characteristics of these films are attributed to effective coupling of the electromagnetic waves to the high‐aspect‐ratio electrically conductive TaSe3 atomic‐thread bundles even when the filler concentration is below the electrical percolation threshold. These novel films are promising for high‐frequency communication technologies, which require electromagnetic shielding films that are flexible, lightweight, corrosion resistant, inexpensive, and electrically insulating.

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Effect of uniaxial stress on the transport properties ofTaSe3

Cited by 29 publications

References 17 publications

Large magnetoresistance in topological insulator candidate TaSe3

Large magnetoresistance in topological insulator candidate TaSe3

Bulk Fermi surface of the layered superconductor TaSe3 with three-dimensional strong topological state

Electrically Insulating Flexible Films with Quasi‐1D van der Waals Fillers as Efficient Electromagnetic Shields in the GHz and Sub‐THz Frequency Bands

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