Effect of uniform and periodic doping by Ce on the properties of barium strontium titanate thin films

Basu, Swaraj; Verma, Ankur; Agrawal, D. C.; Mohapatra, Y. N.; Katiyar, Ram S.

doi:10.1007/s10832-007-9336-7

Cited by 18 publications

(2 citation statements)

References 36 publications

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“…5 Also power dissipation in memory devices is due to the leakage current through the gate dielectric material. 7 Various multilayer structures with BST as the main constituent have been studied such as BST/ SiO 2 / BST, BST/ ZrO 2 / BST, BST/ Ba 0.8 Sr 0.2 Ce x Ti 1−x O 3 ͑BSCT͒ / BST, ͑Ba, Sr͒TiO 3 / MgO/ ͑Ba, Sr͒TiO 3 ͑BST/MgO/BST͒, Ba͑Zr, Ti͒O 3 / BST/ Ba͑Zr, Ti͒O 3 ͑BZT/BST/BZT͒, etc., [8][9][10][11][12] and different properties enhancement have been also reported. Tremendous effort has been made to optimize the dielectric as well as electrical properties of BST thin films for different device applications.…”

Section: Introductionmentioning

confidence: 89%

Leakage mechanism of Ba0.8Sr0.2TiO3/ZrO2 multilayer thin films

Sahoo¹,

Misra²,

Agrawal³

et al. 2010

Journal of Applied Physics

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Articles you may be interested inElectrode interface control of the Schottky diode-like behavior in epitaxial Pb(Zr0.2Ti0.8)O3 thin films: A critical analysis J. Appl. Phys. 113, 214108 (2013); 10.1063/1.4808464 Effect of Pt bottom electrode texture selection on the tetragonality and physical properties of Ba0.8Sr0.2TiO3 thin films produced by pulsed laser deposition J. Appl. Phys. 112, 044105 (2012); 10.1063/1.4748288 Improved dielectric properties and their temperature insensitivity in multilayered Ba0.8Sr0.2TiO3/ZrO2 thin films J. Appl. Phys. 109, 064108 (2011); 10.1063/1.3563576 Changes in the leakage currents in Ba 0.8 Sr 0.2 Ti O 3 ∕ Zr O 2 multilayers due to modulations in oxygen concentration Appl. Phys. Lett. 85, 5001 (2004); 10.1063/1.1825074Leakage mechanism of ( Ba 0.7 Sr 0.3 ) TiO 3 thin films in the low-temperature rangeThe temperature and field dependence of the I-V characteristics of Ba 0.8 Sr 0.2 TiO 3 thin films and Ba 0.8 Sr 0.2 TiO 3 / ZrO 2 multilayer thin films on Pt/ Ti/ SiO 2 / Si substrates are studied in the temperature range from 310 to 410 K. Leakage current behaviors of the film is analyzed in the light of various models. The bulk limited Poole-Frenkel mechanism is observed to dominate the leakage current in the temperature range of 310-410 K in the high field region. The energy of the trap levels calculated from the Poole-Frenkel model is in the range of 0.2-1.31 eV for different structures. In the low electric field region the conduction is Ohmic where as space charge limited current conduction is the dominant mechanism in the intermediate electric field region for all the temperatures.

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Section: Introductionmentioning

confidence: 89%

Leakage mechanism of Ba0.8Sr0.2TiO3/ZrO2 multilayer thin films

Sahoo¹,

Misra²,

Agrawal³

et al. 2010

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

show abstract

“…Also, multilayer BST film of BST/Ce-BST/BST/Ce-BST/./BST [23] was an interesting structure design, and used to mitigate this difficulty. As dopants can reduce crystal grain size, and often reduce permittivity and lower dielectric loss, thus it can be reasonable and feasible to design and synthesize alternately doped multilayer BST film of A1-BST/A2-BST/A1-BST/A2-BST/./A2-BST (where A1 and A2 show two different dopants) to conquer the difficulty, but there has been no such report yet.…”

Section: Introductionmentioning

confidence: 99%