Effect of UV anneal on plasma CVD low-k film

Shioya, Yoshimi; Ohdaira, Toshiyuki; Suzuki, Ryoichi; Seino, Yutaka; Omote, Kazuhiko

doi:10.1016/j.jnoncrysol.2007.12.011

Cited by 27 publications

(24 citation statements)

References 5 publications

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“…To explore this relationship further, we provide calculations for the 43 Ca magnetic-shielding tensors in Ca 21 and the linear ions CaF 1 , CaOH 1 , and CaF 1 at the HF and PBE levels (Supporting Information Table S1). Both computational methods yield the same shielding constant (to within 0.2 ppm) for Ca 21 . For linear ions, there is no expected paramagnetic contribution to the principal component of the shielding tensor lying along the bonding axis.…”

Section: Full Papermentioning

confidence: 71%

Calculations of solid‐state ⁴³Ca NMR parameters: A comparison of periodic and cluster approaches and an evaluation of DFT functionals

et al. 2017

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We present a computational study of magnetic-shielding and quadrupolar-coupling tensors of Ca sites in crystalline solids. A comparison between periodic and cluster-based approaches for modeling solid-state interactions demonstrates that cluster-based approaches are suitable for predicting Ca NMR parameters. Several model chemistries, including Hartree-Fock theory and 17 DFT approximations (SVWN, CA-PZ, PBE, PBE0, PW91, B3PW91, rPBE, PBEsol, WC, PKZB, BMK, M06-L, M06, M06-2X, M06-HF, TPSS, and TPSSh), are evaluated for the prediction of Ca NMR parameters. Convergence of NMR parameters with respect to basis sets of the form cc-pVXZ (X = D, T, Q) is also evaluated. All DFT methods lead to substantial, and frequently systematic, overestimations of experimental chemical shifts. Hartree-Fock calculations outperform all DFT methods for the prediction of Ca chemical-shift tensors. © 2017 Wiley Periodicals, Inc.

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Section: Full Papermentioning

confidence: 71%

Calculations of solid‐state ⁴³Ca NMR parameters: A comparison of periodic and cluster approaches and an evaluation of DFT functionals

et al. 2017

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“…158 UV curing technologies have enabled some reduction in dielectric permittivity (through introduction of interconnected porosity) without a significant reduction in Young's modulus. [159][160][161][162][163][164] A survey of the literature suggests that low-k ILDs with Young's moduli of 5-10 GPa have been successfully integrated into high volume manufacturing interconnect fabrication processes. 24,25,148 Similar to low-k ILDs, low-k DB materials also exhibit reduce mechanical properties relative to the PECVD a-SiN:H films originally employed.…”

Section: -122mentioning

confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

133

115

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Over the past decade, the primary focus for improving the performance of nano-electronic metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) delays via utilizing insulating dielectrics with ever lower values of dielectric permittivity. The integration and implementation of such low dielectric constant (i.e. low-k) materials has been fraught with numerous challenges. For intermetal and interlayer (ILD) low-k dielectrics, these challenges have been largely associated to integration with metal interconnect fabrication processes and well documented and reviewed in the literature. Although equally important, less attention has been given to other low-k dielectrics utilized in metal interconnect structures that are commonly referred to as low-k dielectric barriers (DB), etch stops (ES), and/or Cu capping layers (CCL). These materials present numerous challenges as well for integration into metal interconnect fabrication processes. However, they also have more stringent integrated functionality requirements relative to low-k ILD materials that serve only a basic purpose of electrically isolating adjacent metal lines. In this article, we review the integration challenges and associated integrated functionality requirements for low-k DB/ES/CCL materials with a focus on the current status and future direction needed for these materials to facilitate both Moore's law (i.e. More Moore) and More than Moore scaling.

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“…Small peaks around 2980 cm À1 are characteristic of C-H stretching in CH 3 present in the low-k material. [18][19][20][21][22][23][24][25][26] The peaks around 1275 cm À1 revealed the Si-CH 3 bending. [18][19][20][21][22][23][24][25][26] Si-O-Si cage-like stretching can be seen from the peaks around 1135 cm À1 .…”

Section: Resultsmentioning

confidence: 99%

“…[18][19][20][21][22][23][24][25][26] The peaks around 1275 cm À1 revealed the Si-CH 3 bending. [18][19][20][21][22][23][24][25][26] Si-O-Si cage-like stretching can be seen from the peaks around 1135 cm À1 . [18][19][20][21][22][23][24][25][26] The broad peaks between 800 to 1100 cm À1 can be hydrogen bond absorption 18) or overlapped with Si-ethyl group absorption.…”

Section: Resultsmentioning

confidence: 99%

Fourier Transform Infrared Spectroscopy of Low-k Dielectric Material on Patterned Wafers

Lam

Tan

Huang

et al. 2012

Jpn. J. Appl. Phys.

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With many of research on Fourier transform IR (FTIR) on low-k materials, our experiments extended the FTIR spectroscopy application to characterization and analysis of the low-k dielectric thin film properties on patterned wafers. FTIR spectra on low-k materials were successfully captured under three sampling modes: reflection, attenuated total reflectance (ATR), and mapping mode. ATR mode is more suitable for CH x band than reflection mode due to its higher sensitivity in this range. FTIR spectroscopy signal analysis on mixed structures (metal and low-k dielectric material) on patterned wafers was also investigated with mapping mode. Based on our investigation, FTIR can be used for low-k material studies on patterned wafer. #

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Effect of UV anneal on plasma CVD low-k film

Cited by 27 publications

References 5 publications

Calculations of solid‐state ⁴³Ca NMR parameters: A comparison of periodic and cluster approaches and an evaluation of DFT functionals

Calculations of solid‐state ⁴³Ca NMR parameters: A comparison of periodic and cluster approaches and an evaluation of DFT functionals

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

Fourier Transform Infrared Spectroscopy of Low-k Dielectric Material on Patterned Wafers

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Effect of UV anneal on plasma CVD low-k film

Cited by 27 publications

References 5 publications

Calculations of solid‐state 43Ca NMR parameters: A comparison of periodic and cluster approaches and an evaluation of DFT functionals

Calculations of solid‐state 43Ca NMR parameters: A comparison of periodic and cluster approaches and an evaluation of DFT functionals

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

Fourier Transform Infrared Spectroscopy of Low-k Dielectric Material on Patterned Wafers

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Calculations of solid‐state ⁴³Ca NMR parameters: A comparison of periodic and cluster approaches and an evaluation of DFT functionals

Calculations of solid‐state ⁴³Ca NMR parameters: A comparison of periodic and cluster approaches and an evaluation of DFT functionals