Effect of UV Illumination on Deposition of Low-k Si-O-C(-H) Films by PECVD

Abstract

The characteristics of plasma are important for the deposition of SiOC(-H) low dielectric thin film. The effect of UV light illumination on the plasma parameter in the capacitive coupled plasma chemical vapor deposition (CCP-CVD) system is investigated. The electron density is almost not changed, but the electron temperature decreases by UV light illumination. The deposition rate increases and the dielectric constant of the film is lowered with UV light.

Characterization of PECVD ultralow dielectric constant porous SiOCH films using triethoxymethylsilane precursor and cinene porogen

“…In terms of plasma-enhanced chemical vapor deposition (PECVD) of low-k SiOCH films, different organosilicate precursors have been employed, such as methyltrimethoxysilane, bistrimethylsilymethane, dimethyldimethoxysilane, methyltriethoxysilane, trimethylsilcane and diethoxymethylsilane (DEMS) [12][13][14][15][18][19][20]. In order to obtain porous low-k films with good mechanical properties by the porogenintroduced PECVD approach, the matrix should be strong enough to avoid collapse after removal of the porogen species.…”