Effect of UV radiation surface damage on silicon position sensitive photodetector

Esebamen, Omeime Xerviar

doi:10.1016/j.ijleo.2015.09.074

Cited by 8 publications

(4 citation statements)

References 8 publications

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“…The origin of this recombination might be attributed to a competition between hydrogen reduction, under high reverse bias potentials in the dark, and the SiO 2 surface layer reduction. Furthermore, several studies have reported UV-induced degradation of SiO 2 [39][40][41], decreasing the overpotential at the interface. Overall, a considerable evolution in the current density recorded under illumination is observed at the same potential at which the dark current density increases as a result of the SiO 2 reduction.…”

Section: Photoelectrochemical Characterizationmentioning

confidence: 99%

Analysis of the physical and photoelectrochemical properties of c-Si(p)/a-SiC:H(p) photocathodes for solar water splitting

Mejia¹,

Sánchez²,

Kurniawan³

et al. 2021

J. Phys. D: Appl. Phys.

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The photoelectrochemical (PEC) properties of sputtered aluminum doped hydrogenated amorphous silicon carbide thin films grown on p-type crystalline silicon substrates were investigated in 1 M H 2 S O 4 solution under chopped light illumination. Optical and structural properties of the top absorber layer were systematically assessed after post-deposition isochronical annealing treatments. Samples exhibited a noticeable improvement of the opto-electronic properties after thermal treatments. In addition, an abrupt enhancement of the photocurrent was observed reaching a saturation value of 17 mA cm−2 at −1.75 V vs. Ag/AgCl (3.5 M KCl). In this research we propose that this enhancement effect is associated to a charge transfer kinetic mechanism influenced by surface states and the p-type substrate. The latter most likely due to the space charge region extending beyond the absorber layer reaching the substrate. Current density-potential and electrochemical impedance spectroscopy measurements in dark revealed a reduction of the S i O 2 native layer at cathodic potentials higher than −1 V vs. Ag/AgCl (3.5 M KCl), which contributes to the high charge transfer kinetic of the system. We believe that these results will contribute to understand the substrate influence in the PEC performance of top absorber layers in multilayer structures for solar water splitting.

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Section: Photoelectrochemical Characterizationmentioning

confidence: 99%

Analysis of the physical and photoelectrochemical properties of c-Si(p)/a-SiC:H(p) photocathodes for solar water splitting

Mejia¹,

Sánchez²,

Kurniawan³

et al. 2021

J. Phys. D: Appl. Phys.

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“…Because the fits are only an approximation of the real profiles, the layers in the fit do not necessarily represent an actual stratified film; thus, the remaining parameters are not constrained to a priori specified physically realistic values. Because UV radiation is known to modify the structure of oxide layers on silicon wafers , (see also Table S2 and related comments on this in the Supporting Information), the substrate parameters from the previous fit (after the first polymer layers) were not directly adapted for these fits, but they were determined once again.…”

Section: Materials and Methodsmentioning

confidence: 99%

Structure of Self-Initiated Photopolymerized Films: A Comparison of Models

et al. 2022

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Self-initiated photografting and photopolymerization (SI-PGP) uses UV illumination to graft polymers to surfaces without additional photoinitiators using the monomers as initiators, "inimers". A wider use of this method is obstructed by a lack of understanding of the resulting, presumably heterogeneous, polymer structure and of the parallel degradation under continuous UV illumination. We have used neutron reflectometry to investigate the structure of hydrated SI-PGP-prepared poly(HEMA-co-PEG 10 MA) (poly(2-hydroxyethyl methacrylate-co-(ethylene glycol) 10 methacrylate)) films and compared parabolic, sigmoidal, and Gaussian models for the polymer volume fraction distributions. Results from fitting these models to the data suggest that either model can be used to approximate the volume fraction profile to similar accuracy. In addition, a second layer of deuterated poly(methacrylic acid) (poly(dMAA)) was grafted over the existing poly(HEMA-co-PEG 10 MA) layer, and the resulting doublegrafted films were also studied by neutron reflectometry to shed light on the UV-polymerization process and the inevitable UVinduced degradation which competes with the grafting.

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“…Moreover, the MSM photodetectors have high operation speed and low capacitance leading to simple integration with field effect transistors in a single chip without complicated fabrication steps [4,5]. As the demand for harsh environment electronic and photonic applications increases, Si cannot meet these requirements mainly due to the limitations in UV radiation resistance and operation temperature (below 150 °C) [6,7]. As an alternative to Si, wide bandgap (WBG) semiconductors such as SiC [8][9][10][11], GaN [12][13][14], and ZnO [15,16] are good candidates for fabricating optoelectronic devices capable of operating in harsh environments.…”

Section: Introductionmentioning

confidence: 99%

Performance enhancement of 3C-SiC thin film UV photodetector via gold nanoparticles

Mousa¹,

Yildirim²,

Teker³

2019

Semicond. Sci. Technol.

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This paper investigates the effect of Au nanoparticles on the performance of 3C-SiC thin film-based ultraviolet photodetector (SiCTF-UVPD) fabricated on Si through a very practical and cost-effective process scheme. The main parameters such as the speed, sensitivity, stability, repeatability, and reliability have been systematically studied. It was observed that the Au nanoparticles substantially improved the photodetector performance with a very high sensitivity of 6.2×10 4 and fast response with rise and decay times of 0.36 s and 0.67 s, respectively at a bias voltage of 20 V. The significant increase in photocurrent from the Au nanoparticles is likely due to localized surface plasmons leading to strong absorption around the Au nanoparticles. The low-cost fabrication, high stability, high sensitivity, and very fast response of the device open good opportunities towards the development of good performance SiC thin film-based photodetectors for optoelectronic applications.

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Effect of UV radiation surface damage on silicon position sensitive photodetector

Cited by 8 publications

References 8 publications

Analysis of the physical and photoelectrochemical properties of c-Si(p)/a-SiC:H(p) photocathodes for solar water splitting

Analysis of the physical and photoelectrochemical properties of c-Si(p)/a-SiC:H(p) photocathodes for solar water splitting

Structure of Self-Initiated Photopolymerized Films: A Comparison of Models

Performance enhancement of 3C-SiC thin film UV photodetector via gold nanoparticles

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