Effect of V-Shaped pits on optical properties of GaN-Based green light-emitting diodes

Liu, Qingming; Han, Dejun; Shang, Lin; Hao, Xiaodong; Hou, Yidong; Zhang, Shuai; Cao, Biyin; Han, Bin; Shan, Hengsheng; Yang, Yingjun; Ma, Shufang; Xu, Bingshe

doi:10.1016/j.optmat.2020.110129

Cited by 2 publications

(2 citation statements)

References 33 publications

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“…Previous studies have adopted photoluminescence (PL) to analyze the intermixing degree of interfacial atoms by considering the change in the diffusion components rather than the exact effect of the interfacial strain and the microstructure on their optical properties [ 9 , 19 ]. Recently, we obtained the interfacial microstructure of epitaxial wafers by transmission electron microscopy and explained the effects of interfacial atomic segregation as well as interstitial atoms on the luminescence properties of QWs [ 20 , 21 , 22 , 23 ]. Therefore, the influence of strain-induced intermixing on the QW luminescence characteristic is complex and needs to be further explored.…”

Section: Introductionmentioning

confidence: 99%

Effects of Thermal-Strain-Induced Atomic Intermixing on the Interfacial and Photoluminescence Properties of InGaAs/AlGaAs Multiple Quantum Wells

Yang,

Zhang,

et al. 2023

Materials

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Quantum-well intermixing (QWI) technology is commonly considered as an effective methodology to tune the post-growth bandgap energy of semiconductor composites for electronic applications in diode lasers and photonic integrated devices. However, the specific influencing mechanism of the interfacial strain introduced by the dielectric-layer-modulated multiple quantum well (MQW) structures on the photoluminescence (PL) property and interfacial quality still remains unclear. Therefore, in the present study, different thicknesses of SiO2-layer samples were coated and then annealed under high temperature to introduce interfacial strain and enhance atomic interdiffusion at the barrier–well interfaces. Based on the optical and microstructural experimental test results, it was found that the SiO2 capping thickness played a positive role in driving the blueshift of the PL peak, leading to a widely tunable PL emission for post-growth MQWs. After annealing, the blueshift in the InGaAs/AlGaAs MQW structures was found to increase with increased thickness of the SiO2 layer, and the largest blueshift of 30 eV was obtained in the sample covered with a 600 nm thick SiO2 layer that was annealed at 850 °C for 180 s. Additionally, significant well-width fluctuations were observed at the MQW interface after intermixing, due to the interfacial strain introduced by the thermal mismatch between SiO2 and GaAs, which enhanced the inhomogeneous diffusion rate of interfacial atoms. Thus, it can be demonstrated that the introduction of appropriate interfacial strain in the QWI process is of great significance for the regulation of MQW band structure as well as the control of interfacial quality.

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Section: Introductionmentioning

confidence: 99%

Effects of Thermal-Strain-Induced Atomic Intermixing on the Interfacial and Photoluminescence Properties of InGaAs/AlGaAs Multiple Quantum Wells

Yang,

Zhang,

et al. 2023

Materials

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“…[23] Among them, V-pits can be engineered for light-emitting devices to reach longer wavelengths. [24] However, additional processing DOI: 10.1002/pssr.202200251 Semipolar {1011} InGaN quantum dots (QDs) formed on GaN V-shaped pits by metal-organic vapor-phase epitaxy (MOVPE) with a growth interruption method are reported. The 3D GaN V-pit structures are directly grown on a patterned sapphire substrate (PSS).…”

Section: Introductionmentioning

confidence: 99%

Metal–Organic Vapor‐Phase Epitaxy of Semipolar InGaN Quantum Dots Based on GaN V‐Shaped Pits

Wang

Han

et al. 2022

Physica Rapid Research Ltrs

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Semipolar {101} InGaN quantum dots (QDs) formed on GaN V‐shaped pits by metal–organic vapor‐phase epitaxy (MOVPE) with a growth interruption method are reported. The 3D GaN V‐pit structures are directly grown on a patterned sapphire substrate (PSS). By adjusting the pattern arrangement direction on the substrate, it is observed in the scanning electron microscopy (SEM) image that elliptical QDs are formed on the {101} semipolar sidewalls of the V‐pits with a density of about 5 × 1010 cm−2. The emission wavelength of semipolar InGaN QDs is confirmed by cathodoluminescence (CL). The gradient distribution of In composition and QD size are observed along the sidewall of the V‐pits. On this basis, a three‐period semipolar InGaN QD sample is prepared. For the temperature‐dependent photoluminescence (TDPL) test, the prominent peak of the sample shows a blueshift with the increase in temperature and reaches the green band (≈523 nm) at room temperature (RT). According to time‐resolved photoluminescence (TRPL) decay curves, a carrier lifetime of 329.3 ps fit by the stretched exponential model is obtained at RT. Compared with c‐plane QDs with the same growth method, the semipolar QDs have a shorter radiative recombination lifetime due to suppressed polarization electric field.

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Effect of V-Shaped pits on optical properties of GaN-Based green light-emitting diodes

Cited by 2 publications

References 33 publications

Effects of Thermal-Strain-Induced Atomic Intermixing on the Interfacial and Photoluminescence Properties of InGaAs/AlGaAs Multiple Quantum Wells

Effects of Thermal-Strain-Induced Atomic Intermixing on the Interfacial and Photoluminescence Properties of InGaAs/AlGaAs Multiple Quantum Wells

Metal–Organic Vapor‐Phase Epitaxy of Semipolar InGaN Quantum Dots Based on GaN V‐Shaped Pits

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