Anodizing of sputtering-deposited magnesium and Mg-0.75at.%Cu and Mg-1.23at.%W alloys has been carried out in a fluoride/glycerol electrolyte. The aims of the study were to investigate the enrichment of alloying elements in the alloy immediately beneath the anodic film and the migration of alloying element species in the film. The specimens were examined by electron microscopy and ion beam analysis. An enrichment of copper is revealed in the Mg-Cu alloy that increases with the anodizing time up to ∼6×10 15 Cu atoms cm −2 . Copper species are then incorporated into the anodic film and migrate outwards. In contrast, no enrichment of tungsten occurs in the Mg-W alloy, and tungsten species are immobile in the film. Anodizing treatments have long been used for the protection of magnesium alloys against corrosion and wear and interest still remains in improving and extending the range of available technologies. [1][2][3][4][5][6] Nevertheless, fundamental knowledge of anodizing of magnesium, 7 for instance relating to the migration rates and transport numbers of film species, is comparatively limited, in part due to the difficulty of forming films of uniform composition and thickness, and also to their reactivity to water. The formation of barrier-type anodic films has been extensively investigated on the valve metals, especially for aluminum, niobium, tantalum, titanium and zirconium.8 These studies have shown that oxide films of uniform thickness are formed under a high electric field that depends upon the film composition and the rate of film growth. [8][9][10] The films on aluminum, tantalum and niobium are usually amorphous, 8 and their formation involves migration of metal ions and oxygen ions, with significant contributions of both types, e.g. the transport numbers of Al 3+ , Nb 5+ and Ta 5+ are ∼0.40, 0.24 and 0.24 respectively. 8 Further, an outer region of the oxide films often contains a low concentration of species derived from the anions of the electrolyte.11 In contrast, the films on zirconium are usually nanocrystalline and form mainly by migration of O 2− ions, 12,13 while films on titanium undergo a transition from amorphous oxide to a mixture of amorphous and crystalline oxide.14 Barrier-type films can also be formed on magnesium, although such films have received much less attention and, consequently, less is known of the details of their composition, structure and growth mechanism. Films formed in aqueous electrolytes are often reported to consist of MgF 2 , MgO and/or Mg(OH) 2 . 5,7,[15][16][17] Barrier-type films can also be formed using non-aqueous electrolytes and the formation of uniform films in such electrolytes provides the opportunity for systematic studies of the anodizing behavior. 18,19 From previous work, anodizing of magnesium alloys can result in the enrichment of alloying elements beneath the anodic film. Such enrichments have been reported for copper, tungsten and zinc beneath oxide/hydroxide films formed on model alloys in an aqueous electrolyte 20,21 and of zinc beneath fluoride-...