Effect of Various Parameters on Flat Region of Occupancy Function of non-Crystalline Silicon with Statistical Analysis

Abstract

Non-crystalline silicon has a leading position in many fields of electronic industrial applications. With this type of silicon material, localized states in the middle of the energy gap, play an important role in determining the wafer characteristic. Therefore, the region around the middle of the energy gap is regarded as the center of charge carrier activities, whereas the occupancy function is employed to define the condition of the localized states, whether they are empty or filled with charge carriers. The occupancy function is divided into three parts within the energy gap. The most important part is the gap center which is always a flat region of a certain width and level. This paper investigates the effect of various parameters on width and level of the flat region of the silicon wafer occupancy function. The work was achieved with the aid of statistical approaches for curve fitting through regression equations. The main contribution is verified through creating a novel MATLAB-SIMULINK model for this case study. The proposed model may represent a significant addition to the Simulink library that does not have such a modelling block.