The growth process and the optical,
luminescence, and scintillation
characteristics of the composition-engineered Gd2.88Sc1.89Al3.23O12 (GSAG) single crystal doped
with 0.1% Pr3+ and 0.1, 0.2, and 0.3% Ce3+ grown
by the μ-PD method are investigated. The GSAG:Ce single-crystal
scintillator grown in Mo crucible is evaluated for the first time.
The comparison of the scintillation properties of GSAG:Ce using Mo
and Ir technologies is presented. The effect of annealing in air and
Mg2+ codoping is also discussed. In the case of the Ce
dopant, the favorable combination of ultralow afterglow, fast scintillation
response, and high-density host together with a cheaper preparation
technology makes these materials competitive and promising for a wide
range of applications.