2021 Devices for Integrated Circuit (DevIC) 2021
DOI: 10.1109/devic50843.2021.9455884
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Effect of Well Width and Barrier Width on I–V Characteristics of Armchair Graphene Nanoribbon based Resonant Tunneling Diode Structure

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Cited by 5 publications
(2 citation statements)
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“…Graphene, by virtue of its favorable electrical and structural properties, has achieved a wide range of applications in the eld of modern electronics. From wearable gadgets to transparent electronic components, there is a keen demand for graphene-based devices these days [1][2][3][4][5][6][7][8]. Its knack for design of compact and e cient devices is an add-on to its novelty.…”
Section: Introductionmentioning
confidence: 99%
“…Graphene, by virtue of its favorable electrical and structural properties, has achieved a wide range of applications in the eld of modern electronics. From wearable gadgets to transparent electronic components, there is a keen demand for graphene-based devices these days [1][2][3][4][5][6][7][8]. Its knack for design of compact and e cient devices is an add-on to its novelty.…”
Section: Introductionmentioning
confidence: 99%
“…Here, the current flow does not suffer from low carrier mobility and charge storage effects, thereby giving rise to extremely fast operating devices with abrupt turn-on and turn-off facilities. Recently, the study of NDR in graphene has drawn potential research interest due to the feasibility of making a quantum well (QW) structure out of a single graphene sheet through structural modifications [26][27][28][29]. Double barrier quantum well (DBQW) structures have been realized by adjusting the width of armchair graphene nanoribbon (AGNR) to obtain NDR.…”
Section: Introductionmentioning
confidence: 99%