Effect of wet-chemical substrate smoothing on passivation of ultrathin-SiO2/n-Si(111) interfaces prepared with atomic oxygen at thermal impact energies

Gref, Orman; Stegemann, Bert

doi:10.2478/s11534-011-0053-0

Cited by 3 publications

(2 citation statements)

References 42 publications

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“…originating from sample exposure to air during the transfer from the furnace to the vacuum system. Following reports in the literature, an additional 45 min hydrogen plasma exposure was carried out at higher temperature (350 °C) for the hydrogen passivation step. To avoid possible hydrogen desorption from the sample, the plasma is maintained until the sample holder temperature reaches 150 °C.…”

Section: Methodsmentioning

confidence: 99%

Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi‐Level Pinning

Poulain

Proost

Klein

2019

Physica Status Solidi (a)

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Different magnetron sputtering‐based deposition methods of nickel oxide SiO2‐passivated Si surfaces are compared. Results highlight that the presence of oxygen in the deposition chamber during reactive sputtering drastically affects the Si/SiO2 interface. An alternative method for the preparation of NiO is the sputtering of metallic nickel in oxygen‐free atmosphere followed by a post oxidation of the deposited layer in an oxygen atmosphere without plasma exposition is proposed. This method is introduced as metal layer oxidation (MLO). Using this technique, the barrier height on n‐type silicon increases from ≈0.4 eV for reactively sputtered NiO to more than 0.6 eV for the MLO method. In situ photoelectron spectroscopy evidences the formation of an extra electronic state when NiO is reactively sputtered, which is assigned to the intense oxygen ion bombardment of the Si/SiO2 surface during the process. This extra‐electronic state pins the silicon energy bands in an undesirable position. The extra‐electronic state is associated with oxygen interstitial in the SiO2 implanted during reactive sputtering.

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Section: Methodsmentioning

confidence: 99%

Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi‐Level Pinning

Poulain

Proost

Klein

2019

Physica Status Solidi (a)

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“…Such low and wide symmetrical defect distributions on Si/SiO x interfaces with ultra-thin oxide layers have up to now only been achieved by much more complex processes like by exposure to thermalized atomic oxygen under UHV conditions [27] or at interfaces of thicker (~ 10 nm) thermal oxides [28]. In order to investigate the passivation stability of the RTO SiO x -nanolayer, the SPV measurement was repeated after 4 weeks of storage under ambient conditions.…”

Section: The Interface State Distribution D It (E)mentioning

confidence: 99%

High quality tunneling oxides for passivated contacts and heterojunctions for high efficiency silicon solar cells

Gad

Vossing

Balamou

et al. 2015

2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)

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We analyze the chemical passivation quality of silicon oxide-nanolayers on crystalline silicon wafers prepared by different oxidation methods with surface photo voltage and quasisteady-state photo conductance measurements. It is shown that for wet chemical oxidation and plasma oxidation, adequate passivation of the interface defects is achieved by subsequent anneal in forming gas environment. Furthermore, we present a simple oxidation method by means of rapid thermal oxidation, which requires no complex surface pre-treatment or surface preconditioning after cleaning. By rapid thermal oxidation (RTO) in a gaseous mixture of argon and oxygen and subsequent anneal in forming gas, a reproducible preparation method of high-quality ultra-thin oxide-nanolayers with a nearly intrinsic energetic distribution of interface states and a defect density of states of only 1 x 10 12 cm -2 eV -1 at the minimum of the distribution is demonstrated.

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Electronic interface properties of silicon substrates after ozone based wet-chemical oxidation studied by SPV measurements

Wolke

Gottschalk²,

Moldovan

et al. 2012

Applied Surface Science

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Effect of wet-chemical substrate smoothing on passivation of ultrathin-SiO2/n-Si(111) interfaces prepared with atomic oxygen at thermal impact energies

Cited by 3 publications

References 42 publications

Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi‐Level Pinning

Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi‐Level Pinning

High quality tunneling oxides for passivated contacts and heterojunctions for high efficiency silicon solar cells

Electronic interface properties of silicon substrates after ozone based wet-chemical oxidation studied by SPV measurements

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