2021
DOI: 10.1016/j.ceramint.2021.01.060
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Effect of Y concentration and film thickness on microstructure and electrical properties of HfO2 based thin films

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Cited by 8 publications
(9 citation statements)
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“…As reported by other studies [ 22 , 23 ], a doping concentration of about 8% of Y brings a stabilization of the cubic phase in HfO 2 . In our case, moving to a higher concentration of Y-dopant than the minimum value required to stabilize the cubic polymorph affects the geometry and the energy of the structures, and as a consequence, the results obtained for the 12% and 16% of Y doping are not so accurate as those obtained for the 8% of Y.…”
Section: Resultssupporting
confidence: 69%
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“…As reported by other studies [ 22 , 23 ], a doping concentration of about 8% of Y brings a stabilization of the cubic phase in HfO 2 . In our case, moving to a higher concentration of Y-dopant than the minimum value required to stabilize the cubic polymorph affects the geometry and the energy of the structures, and as a consequence, the results obtained for the 12% and 16% of Y doping are not so accurate as those obtained for the 8% of Y.…”
Section: Resultssupporting
confidence: 69%
“…The presence of Y in HfO 2 at 8% brings an increase of the dielectric constant values; in particular, the ε r of the monoclinic polymorph reaches 28.27 , the orthorhombic one extends to 35.54, and similarly, the cubic phase reaches 36.81. This is not surprising, since it is already known that Y promotes the transition to a higher dielectric constant [ 21 , 22 , 23 , 27 ].…”
Section: Resultsmentioning
confidence: 73%
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