2019
DOI: 10.3389/fmats.2019.00043
|View full text |Cite
|
Sign up to set email alerts
|

Effect of Zinc Oxide Modification by Indium Oxide on Microstructure, Adsorbed Surface Species, and Sensitivity to CO

Abstract: Additives in semiconductor metal oxides are commonly used to improve sensing behavior of gas sensors. Due to complicated effects of additives on the materials microstructure, adsorption sites and reactivity to target gases the sensing mechanism with modified metal oxides is a matter of thorough research. Herein, we establish the promoting effect of nanocrystalline zinc oxide modification by 1-7 at.% of indium on the sensitivity to CO gas due to improved nanostructure dispersion and concentration of active site… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
14
0

Year Published

2020
2020
2022
2022

Publication Types

Select...
6
1

Relationship

2
5

Authors

Journals

citations
Cited by 13 publications
(14 citation statements)
references
References 43 publications
0
14
0
Order By: Relevance
“…Hence, the active sites responsible for probe molecules oxidation were mainly constituted by other adsorbed and/or oxygen species and OH-groups, rather than O 2 − . The small concentration of O 2 − is in line with Weisz limitation, which states that maximum coverage of ionosorbates at the semiconductor surface cannot exceed 10 −3 -10 −2 monolayer, i.e., 1.7 × 10 Oxidizing surface sites were evaluated using TPR with hydrogen [63,75,76,78,79]. TPR profiles are shown in Figure 15.…”
Section: Oxidizing Sites (Chemisorbed Oxygen)mentioning
confidence: 54%
See 3 more Smart Citations
“…Hence, the active sites responsible for probe molecules oxidation were mainly constituted by other adsorbed and/or oxygen species and OH-groups, rather than O 2 − . The small concentration of O 2 − is in line with Weisz limitation, which states that maximum coverage of ionosorbates at the semiconductor surface cannot exceed 10 −3 -10 −2 monolayer, i.e., 1.7 × 10 Oxidizing surface sites were evaluated using TPR with hydrogen [63,75,76,78,79]. TPR profiles are shown in Figure 15.…”
Section: Oxidizing Sites (Chemisorbed Oxygen)mentioning
confidence: 54%
“…In the following sections, these relationships are reviewed based on our experimental studies of nanocrystalline n-type MOS: ZnO, In 2 O 3 , SnO 2 , BaSnO 3 , TiO 2 , WO 3 , Bi 2 WO 6 . The materials were synthesized via the standardized aqueous precipitation of metal hydroxides followed by calcination at temperature 300-700 • C [63,[74][75][76][77][78]. observation of actual reactivity of surface sites under in situ reaction conditions is an unresolved problem; and the above definition refers to a potential participation of certain types of active sites in real-life chemical reactions that determine the functionality of catalytic and sensing materials.…”
Section: Types Of Active Sites At the Mos Surfacementioning
confidence: 99%
See 2 more Smart Citations
“…The nature of the two negative bands in the 1600–1300 cm −1 region is not entirely clear [ 50 , 51 ]. However, it is worth noting that the positive absorption intensity in this region increases with the increase in the partial pressure of oxygen in the surrounding atmosphere [ 52 ], while the negative intensity is observed in the presence of reducing gases CO and H 2 [ 50 ] and increases due to continuous heating in high vacuum at T = 370 °C [ 52 ]. Thus, the nature of these bands is related to defects in the crystal structure of ZnO [ 51 ].…”
Section: Resultsmentioning
confidence: 99%