Abstract:In this paper, electrochemical etching of the p-type silicon wafer is used to prepare p-type porous silicon with current density of 10 mA.cm− 2 for 10 minutes. Field Emission Scanning Electron Microscopy (FESEM) has been used to study porous silicon layer surface morphology. Zinc oxide and lithium oxide nanoparticles are prepared separately by chemical precipitation method and simple precipitation method, respectively and deposited on glass substrates by drop casting method. Moreover,, the structural propertie… Show more
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