Effect of Zirconium Doping on Electrical Properties of Aluminum Oxide Dielectric Layer by Spin Coating Method with Low Temperature Preparation

Abstract

<jats:p>In recent years, significant efforts have been devoted to the research and development of spin-coated Al2O3 thin films, due to their large band gaps, high breakdown voltage and stability at high annealing temperature. However, as the alumina precursor has a large surface energy, substrates need to be treated by plasma before spin coating. Therefore, to avoid the expensive and process-complicated plasma treatment, we incorporated zirconium nitrate into the aluminum nitrate solution to decrease the surface energy of the precursor which improve the spreadability. Then, the electrical performances and the surface morphologies of the films were measured. For comparison, the pure Al2O3 films with plasma treatments were also prepared. As a result, after low temperature annealing (200 °C), the relative dielectric constant of Zr–AlOx spin-coated thin-film MIM (Metal-Insulator-Metal) devices can reach 12 and the leakage current density is not higher than 7.78 × 10−8 A/cm2 @ 1 MV/cm when the concentration of zirconium nitrate is 0.05 mol/L. The Aluminum oxide film prepared by zirconium doping has higher stability and better electrical properties than the pure films with plasma treatments and high performance can be attained under low-temperature annealing, which shows its potential application in printing and flexible electronic devices.</jats:p>

Research Progress of High Dielectric Constant Zirconia-Based Materials for Gate Dielectric Application

“…Liu et al [57] incorporated Al 2 O 3 into ZrO 2 to optimize and adjust its electrical properties such as capacitance and leakage current. Our group also reported a high-k Zr-AlO x dielectrics were fabricated by sol-gel spin coating at a low temperature annealing process, which can be applied to the preparation of high performance TFT [58]. By adjusting the k value of the gate dielectric from 11.3 to an appropriate value (8.1), a reasonable tradeoff is achieved between the gate screening effect on the Coulomb-impurity scattering and the surface optical phonon scattering [57], thus greatly improving the carrier mobility of the device.…”

Correction: Zhou et al. Effect of Zirconium Doping on Electrical Properties of Aluminum Oxide Dielectric Layer by Spin Coating Method with Low Temperature Preparation. Coatings 2020, 10, 620

“…The authors wish to make the following corrections to this paper [1]: While this manuscript was in preparation, there are some data processing errors leading to some drawing mistakes. Replace: The authors would like to apologize for any inconvenience caused to the readers by these changes.…”