Effect of Zn and Sn incorporation on the crystallinity of spin-coated CuInSe2 thin films

Yadav, Jagavendra; Prasad, Jagdish; Sharma, Hansraj; Kumar, Sunil; Singh, M.

doi:10.1007/s10854-022-08749-x

Cited by 7 publications

(6 citation statements)

References 27 publications

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“…The doped ZnO thin films observed band gap increased as mentioned in Table 2 and seen in Fig. 9 and similar behavior was observed that band gap increased with decreased XRD intensity by Jagavendra et al, 29 . The efficiency of creating nano-scale devices using these materials is boosted as a result of the band gap increase.…”

Section: Zno Thin Films Optical Propertiessupporting

confidence: 83%

Effect of Sn-incorporation on the Structural and Optical Properties of ZnO Thin Films Prepared by Sol-Gel Method

Sharma,

Kumar,

Yadav

et al. 2023

Orient. J. Chem

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In this research, thin films of ZnO doped with Sn were prepared through the sol-gel method. The effects of Sn dopant on optical, morphological and structural studies were investigated. All of the films in this work showed favored orientation along the (002) plane, according to XRD analysis. It was observed by SEM analysis that the study Sn morphological and structural studies were investigated. From AFM pictures it is clear that as the doping concentration rises, the size of the grains on the surface of thin films decreases.The existence of Zn, O and Sn was verified by the EDAX analysis. The Ultraviolet-visible spectroscope was utilized to examine the optical characteristics. That band gap increased with the dopant material percent increased.

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Section: Zno Thin Films Optical Propertiessupporting

confidence: 83%

Effect of Sn-incorporation on the Structural and Optical Properties of ZnO Thin Films Prepared by Sol-Gel Method

Sharma,

Kumar,

Yadav

et al. 2023

Orient. J. Chem

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“…The current films revealed an energy band gap of the value of 1.84 eV which is wider than those reported for thin film prepared by the spin coating technique as 1.39–1.58 eV. [ 5 ] It is even much larger than those obtained by the spray pyrolysis technique. [ 6 ] The latter reported energy band gap values of 1.05 eV for CuInSe 2 films.…”

Section: Resultsmentioning

confidence: 78%

“…The high-low resistance ratio for these devices is larger than 5.7 and the retention times exceeded over 10 4 s. [4] Copper indium selenide thin films are prepared by various techniques including radiofrequency magnetron scattering, [5] spray pyrolysis followed by selenization process, [6] and flash evaporation techniques. [7] Each technique used for producing this material revealed different physical properties from the other.…”

Section: Introductionmentioning

confidence: 99%

“…As for examples, thin films prepared by spin coating technique showed energy band gap values of 1.45, 1.39, and 1.58 eV, for pure and Sn and Zn doped CuInSe 2 thin films, respectively. [ 5 ] Films prepared by spray pyrolysis technique displayed an energy band gap of 1.05 eV. [ 6 ] The high effect of the preparation method on the optoelectronic performance of copper indium selenide thin films motivated us to prepare it by the pulsed laser welding technique for the first time.…”

Section: Introductionmentioning

confidence: 99%

“…The novelty of the work lies in optimizing the best parameters that allow the production of this compound on large scales and short periods of time so that large film areas are produced. As we mentioned the radiofrequency magnetron scattering, [ 5 ] spray pyrolysis followed by selenization process [ 6 ] and flash evaporation techniques [ 7 ] produced CuInSe 2 thin films in longer periods of time that may extend to hours. The produced film areas are highly limited due to the long time consumption.…”

Section: Introductionmentioning

confidence: 99%

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Formation, Enhanced Crystallization, Optical Absorption and Electrical Conduction in Copper Indium Selenide Thin Films Prepared via Pulse Laser Welding Technique

Khusayfan,

Khanfar,

Alharbi

2023

Cryst. Res. Technol.

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In this study, thin films of CuInSe2 (CIS) are expeditiously fabricated within 1 s utilizing the pulsed laser welding (PLW) technique. Preceding the PLW process, thin films of InSe (500 nm) are coated with Cu nanosheets of 60 and 120 nm thicknesses using vacuum coating systems. The optimal PLW parameters leading to the formation of CIS films include a pulse width of 1.0 ms, a spot diameter of 2.0 mm, and a repetition frequency of 10 Hz. The resulting CIS films exhibited a well‐crystalline cubic structure with lattice parameters of 5.265 Å. Surface morphology analyses revealed the preferential formation of porous films with varying stoichiometry, a characteristic that can be manipulated by adjusting laser welding parameters. The energy band gap and room temperature electrical conductivity display values of 1.80 eV and 2.06 × 10−5 (Ωcm)−1, respectively. Cu‐rich samples exhibit a wider energy band gap of 1.94 eV and lower electrical conductivity values of 4.78 × 10−7 (Ωcm)−1. The CIS film demonstrates n‐type conductivity attributed to the formation of donor levels centered at 0.24 and 0.10 eV. This study presents an ultrafast method for fabricating CIS films with physical properties compatible with those produced using traditional methods.

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Synthesis and Characterization of SnS Nanoparticles by Hydrothermal Method

Choudhari,

Yadav,

Kumar

et al. 2024

Advances in Sustainability Science and Technology

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Effect of Zn and Sn incorporation on the crystallinity of spin-coated CuInSe2 thin films

Cited by 7 publications

References 27 publications

Effect of Sn-incorporation on the Structural and Optical Properties of ZnO Thin Films Prepared by Sol-Gel Method

Effect of Sn-incorporation on the Structural and Optical Properties of ZnO Thin Films Prepared by Sol-Gel Method

Formation, Enhanced Crystallization, Optical Absorption and Electrical Conduction in Copper Indium Selenide Thin Films Prepared via Pulse Laser Welding Technique

Synthesis and Characterization of SnS Nanoparticles by Hydrothermal Method

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