Effect of Zn doping on structure and ferroelectric properties of PST thin films prepared by sol–gel method

Zheng, Zan; Zhao, Hongjian; Weng, Wenjian; Han, Gaorong; Ma, Ning; Du, Piyi

doi:10.1007/s10854-010-0141-8

Cited by 4 publications

(2 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Miao et al controlled defects in (Ba 0.8 Sr 0.2 )(Zr 0.2 Ti 0.8 )O 3 films through Co acceptor doping to depress the leakage current and increase tunable properties of films [10]. In PST system, though some researches [11,12] about acceptor doping have been carried out, most of them mainly focus on the effect of acceptor dopant on the dielectric loss, and the related physics mechanisms behind the element doping adjusting defect concentration and types and then changing polarization and dielectric properties still need to be explored.…”

Section: Introductionmentioning

confidence: 99%

The effect of Mg doping on the dielectric and tunable properties of Pb0.3Sr0.7TiO3 thin films prepared by sol–gel method

Sun

Hou

et al. 2013

Appl. Phys. A

View full text Add to dashboard Cite

Mg doped Pb 0.3 Sr 0.7 TiO 3 (PST) thin films were fabricated by the sol-gel method on a Pt/Ti/SiO 2 /Si substrate. The microstructure, surface morphology, dielectric and tunable properties of PST thin films were investigated as a function of Mg concentration. It is found that proper Mg doping dramatically improves the dielectric loss (0.0088 @ 1 MHz), furthermore, the crystallinity, dielectric constant, and tunability of films simultaneously decrease with the increase of Mg content. The 2 mol% Mg doped PST thin film shows the highest figure of merit (FOM) value of 36.8 for its the smallest dielectric loss and upper tunability. The dependence of Rayleigh coefficient on the doping concentration was examined, which indicated that the reduction of dielectric constant and tunability of films should be related to the Mg Ti -V •• O defect dipoles pinning the domain wall motion of residual polar clusters in PST.

show abstract

Section: Introductionmentioning

confidence: 99%

The effect of Mg doping on the dielectric and tunable properties of Pb0.3Sr0.7TiO3 thin films prepared by sol–gel method

Sun

Hou

et al. 2013

Appl. Phys. A

View full text Add to dashboard Cite

show abstract

“…The sol–gel method features ease of setup, flexible control of the phase constituents and varied dopants, cost-effectiveness, and large-area application . Doping-induced orientation could occur often in sol–gel-derived thin films, being independent of substrate selection and epitaxy. − The silicon substrate can be chosen as the base of fabricating 1–3-type ME coupling thin films, when designing the BaTiO 3 -Ni 0.5 Zn 0.5 Fe 2 O 4 composite thin film by the sol–gel method. All of the constituent elements are mixed together in the sol precursor originally.…”

Section: Introductionmentioning

confidence: 99%

Mechanism of Doping-Induced Orientation of Magnetic Phase in a Sol–Gel-Derived Ni_0.5Zn_0.5Fe₂O₄/BaTiO₃ Multiferroic Thin Film with High Magnetoelectric Coupling

Tian

et al. 2021

J. Phys. Chem. C

Self Cite

View full text Add to dashboard Cite

1−3-Type ferromagnetic/ferroelectric multiferroic composite thin films for high magnetoelectric coupling have been fabricated successfully on Si(111) substrate. The mechanism of control of the formation of (111)-oriented Ni 0.5 Zn 0.5 Fe 2 O 4 (NZFO) magnetic phases arrayed in and isolated by ferroelectric phases of BaTiO 3 (BTO) was explored in detail. By adjusting the Ti 4+ doping content in the NZFO phase and the composition of constituent phases to change the contact angle and heterogeneous nucleation barrier, the NZFO phase was controlled to grow with high crystallinity and dominantly in the (111) orientation. Under an NZFO composition content of 0.9, the contact angle of the film is minimum, ∼10°or less; the nucleation ability of NZFO is the best; the crystallinity is the maximum; and the orientation degree is 300.97. Taking the 1−3-type composite thin films into consideration, 0.9NZFO/0.1BTO composite thin films with nano-BTO filled possessed high to 44.8% sharp drop of the magnetic moment at 398−400 K, around the Curie temperature of BTO. It represented a giant magnetoelectric coupling response. It is interesting to understand the reason and to know how to fabricate multiferroic thin films with high magnetoelectric coupling.

show abstract

High dielectric tunability of (100) oriented PbxSr1−xTiO3 thin film coordinately controlled by dipole activation and phase anisotropy

Zheng

Yao

Weng

et al. 2011

Journal of Applied Physics

View full text Add to dashboard Cite

Why the dielectric tunability is maximal in dielectrics near the cubic–tetragonal phase transformation point is still unknown, although it is well accepted for tunable dielectrics till now. Here, we report dielectric tunability following a typical (100) oriented PbxSr1−xTiO3 (PST) thin film with different Pb/Sr ratio. The (100) PST thin films were prepared by sol-gel method on the terbium doped lead titanate (2%Tb-PbTiO3) inducing layer. They are tensile strained and the spontaneous polarizations (dipoles) are along the in-plain direction. Driven by the vertical DC bias, the dipoles in the (100) PST will be possibly rotated to the direction along DC bias and thus tunable permittivity appears. All these thin films show high dielectric tunability over 50%, in which the PST45(Pb0.45Sr0.55TiO3) exhibits the highest one. In this paper, the tunability is found controlled coordinately by both the anisotropy of the perovskite phase and the activation of dipole rotation. It increases with increasing the anisotropy when Pb increases based on the enlarging difference in permittivity along a and c directions, while it decreases with increasing the activation energy based on uneasy rotation of dipoles under DC bias. That is why, high dielectric tunability always exists near the cubic–tetragonal phase transformation; at this point, the activation energy is not so high and the permittivity difference keeps still a little significant.

show abstract

Effect of Zn doping on structure and ferroelectric properties of PST thin films prepared by sol–gel method

Cited by 4 publications

References 25 publications

The effect of Mg doping on the dielectric and tunable properties of Pb0.3Sr0.7TiO3 thin films prepared by sol–gel method

The effect of Mg doping on the dielectric and tunable properties of Pb0.3Sr0.7TiO3 thin films prepared by sol–gel method

Mechanism of Doping-Induced Orientation of Magnetic Phase in a Sol–Gel-Derived Ni_0.5Zn_0.5Fe₂O₄/BaTiO₃ Multiferroic Thin Film with High Magnetoelectric Coupling

High dielectric tunability of (100) oriented PbxSr1−xTiO3 thin film coordinately controlled by dipole activation and phase anisotropy

Contact Info

Product

Resources

About

Effect of Zn doping on structure and ferroelectric properties of PST thin films prepared by sol–gel method

Cited by 4 publications

References 25 publications

The effect of Mg doping on the dielectric and tunable properties of Pb0.3Sr0.7TiO3 thin films prepared by sol–gel method

The effect of Mg doping on the dielectric and tunable properties of Pb0.3Sr0.7TiO3 thin films prepared by sol–gel method

Mechanism of Doping-Induced Orientation of Magnetic Phase in a Sol–Gel-Derived Ni0.5Zn0.5Fe2O4/BaTiO3 Multiferroic Thin Film with High Magnetoelectric Coupling

High dielectric tunability of (100) oriented PbxSr1−xTiO3 thin film coordinately controlled by dipole activation and phase anisotropy

Contact Info

Product

Resources

About

Mechanism of Doping-Induced Orientation of Magnetic Phase in a Sol–Gel-Derived Ni_0.5Zn_0.5Fe₂O₄/BaTiO₃ Multiferroic Thin Film with High Magnetoelectric Coupling