2024
DOI: 10.1021/acsaelm.4c00281
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Effect of ZnO Interfacial Seed Layer in Sol–Gel Grown ZnMgO Ferroelectric

Dominic A. Dalba,
Xiaoman Zhang,
Wangwang Xu
et al.

Abstract: High remanent polarization observed in ferroelectric ZnMgO shows promise for ferroelectric memory devices made of low-cost, earth-abundant materials and is capable of a large memory window. To address the low performance of devices fabricated using low-cost sol−gel processing, an interfacial-structure-based approach to improve crystallinity in ZnMgO thin films was chosen. In this study, we demonstrate an increase of 182% in achievable remanent polarization coinciding with higher crystallinity and a larger rati… Show more

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