Effect of ZnS Adhesion Layer on Overwrite Cyclability    of Phase Change Optical Recording Media

Ebina, Atsushi; Hirasaka, Masao; Isemoto, Jun; Takase, Aya; Fujinawa, Go; Sugiyama, Ikuto

doi:10.1143/jjap.40.1569

Cited by 12 publications

(5 citation statements)

References 15 publications

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“…4 The effect of several transparent dielectric films, employed as capping layers (protective layers) on the crystallization kinetics of Ge-Sb-Te recording film, has been studied. [5][6][7] The Ge-Sb-Te alloys employed in those studies belong to the class of fast nucleation materials. It has been reported that not only do the protective films influence the crystallization mechanism but they also affect the number of achievable overwrite cycles.…”

Section: Introductionmentioning

confidence: 99%

Influence of dielectric capping layers on the crystallization kinetics of Ag5In6Sb59Te30 films

Njoroge

Dieker

Wuttig

2004

Journal of Applied Physics

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AgInSbTe alloys are attractive storage materials for phase change recording utilizing both optical and electronic contrast. The demand to decrease the thickness of such storage layers increases the significance of the surrounding dielectric layers, which can have a profound impact on the crystallization process. Hence we have investigated the influence of different capping layers on the crystallization kinetics of Ag5In6Sb59Te30 films by measuring the electrical resistivity of the films as a function of temperature employing the van der Pauw method. While the phase transition temperature was found to only increase slightly for capped Ag5In6Sb59Te30 films, a profound impact on the activation barrier for crystallization was observed. Activation energies of 2.39±0.10eV and 3.24±0.12eV were determined for films capped with 5nm of ZnS-SiO2 and Si3N4, respective1y, in comparison with a value of 3.03±0.17eV for an uncapped film. Additional stress measurements reveal that this change in activation barrier is not caused by stresses induced by the dielectric films but must rather be due to the different activation barriers for heterogeneous nucleation at the different interfaces. In the amorphous state the temperature dependence of the sheet resistance follows an activation-type relation, where the activation energy is not affected by the capping layer.

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Section: Introductionmentioning

confidence: 99%

Influence of dielectric capping layers on the crystallization kinetics of Ag5In6Sb59Te30 films

Njoroge

Dieker

Wuttig

2004

Journal of Applied Physics

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“…It is believed that the modification of the chemical reactivity and the degree of nucleation at the interface and the stress as a result of volume shrinkage might be the reasons for the delayed crystallization kinetics. [14][15][16][17][18][19] It has been reported that GST nanowires show a reduced crystallization temperature and activation energy as their size reduces due to size-dependent surface-induced heterogeneous nucleation. 14 In a similar point of view, the interfaces between GST nanoclusters and thin layers of oxide could play a role of the site for heterogeneous nucleation; we observed that a grain size of the crystalline GST decreased when the GST clusters were capsulated by a thin layer of TiO x .…”

mentioning

confidence: 99%

Formation of Ge[sub 2]Sb[sub 2]Te[sub 5]–TiO[sub x] Nanostructures for Phase Change Random Access Memory Applications

Lee

Yim

Lyeo

et al. 2010

Electrochem. Solid-State Lett.

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Amorphous Ge 2 Sb 2 Te 5 clusters with a size of 20 nm, self-enclosed by a thin layer of TiO x , were obtained by cosputtering Ge 2 Sb 2 Te 5 and TiO 2 targets at room temperature with the aim of reducing the reset current for phase change random access memory applications. Eutectic decomposition during the deposition caused a phase separation of Ge 2 Sb 2 Te 5 and TiO x . The temperature-dependent resistance change results showed that the activation energy for crystallization increased from 2.44 Ϯ 0.76 to 3.84 Ϯ 1.43 eV in the Ge 2 Sb 2 Te 5 film. The set resistance can be tuned within an acceptable range, and the reliability of this microstructure during repetitive laser melt-quenching cycles was tested.

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“…For instance, Yamada et al 1,2) and Miao et al 3) applied a thin caplayer of GeN at one or both sides of the phase-change layer, preventing S atoms from the ZnS:SiO 2 layer to diffuse into the phase-change layer. Or in the opposite direction: Ebina et al 4) applied a ZnS caplayer, which has been measured to prevent Ge from diffusing out of GeSbTe layer, a property that they held responsible for the improved overwrite cyclability.…”

Section: Introductionmentioning

confidence: 99%

Analysis of the Degradation Mechanism during Repeated Overwrite of Phase-Change Discs

Kuiper

Pasquariello

Bulle-Lieuwma

et al. 2007

jjap

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Rewritable optical digital versatile discs (DVDs) were analyzed to identify alterations in layer composition after repeated overwrite cycles. Elemental depth profiling revealed the presence of S in the phase-change layer in areas with high jitter values. This we relate to a decomposition of the ZnS:SiO 2 dielectric layer during repeated overwrite. The S concentration in the phase-change layer at the location of the repeatedly overwritten tracks is estimated to range between 0.1 and 1 at. %, depending on whether or not a caplayer is present between the ZnS:SiO 2 layer and the phase-change layer. From electron microscope images we established that repeated overwrite cycles induce voids in the phase-change layer. By analyzing the repeatedly overwritten areas of various recording stacks we collected evidence that a caplayer may suppress void formation. Both S diffusion and void formation will limit the overwrite cyclability of optical discs, which explains the frequently reported beneficial effect of a caplayer on overwrite performance.

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Effect of ZnS Adhesion Layer on Overwrite Cyclability of Phase Change Optical Recording Media

Cited by 12 publications

References 15 publications

Influence of dielectric capping layers on the crystallization kinetics of Ag5In6Sb59Te30 films

Influence of dielectric capping layers on the crystallization kinetics of Ag5In6Sb59Te30 films

Formation of Ge[sub 2]Sb[sub 2]Te[sub 5]–TiO[sub x] Nanostructures for Phase Change Random Access Memory Applications

Analysis of the Degradation Mechanism during Repeated Overwrite of Phase-Change Discs

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