2016
DOI: 10.1016/j.cplett.2016.06.075
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Effect of Zr doping on the electrical and optical properties of ZnO

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Cited by 22 publications
(6 citation statements)
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“…To evaluate the relative difficulty for the incorporation of dopants into the host lattice in experiments, we calculated the formation energies (E f ) of different (Mo + P) codoping congurations. The smaller the formation energy, the easier the substitutional doping is; 46 that is to say, the stability of the doped SrTiO 3 with different substitutional sites is determined by the relative formation energy. The formation energies of monodoped Mo and P, and the codoped (Mo + P) SrTiO 3 systems are dened as follows:…”
Section: Resultsmentioning
confidence: 99%
“…To evaluate the relative difficulty for the incorporation of dopants into the host lattice in experiments, we calculated the formation energies (E f ) of different (Mo + P) codoping congurations. The smaller the formation energy, the easier the substitutional doping is; 46 that is to say, the stability of the doped SrTiO 3 with different substitutional sites is determined by the relative formation energy. The formation energies of monodoped Mo and P, and the codoped (Mo + P) SrTiO 3 systems are dened as follows:…”
Section: Resultsmentioning
confidence: 99%
“…The decrement, as theorised, can occur with higher Zr−doping due to the creation of localized levels near the conduction band providing a large number of electrons to reach the conduction band, 89 improvement in the crystallinity of the composite structure and defects produced by Zr 4+ in TiO2 lattice or enhancement in crystal domains. 90,91 Oxygen functionalization has also been identified to tune the bandgap of graphene. 92 So, in the presence of some oxygen containing functional group such as (-OH) and (-COOH) in graphene oxide, some unpaired π-electrons bonded with the free electrons on the surface of TiO2 forming a Ti-O-C structure as observed in the acquired characterization information, which shifted up the valence band edge thus reducing the band gap.…”
Section: Materials Advances Accepted Manuscriptmentioning
confidence: 99%
“…%. As a scarce resource, Zr is often used as a dopant for photoelectric materials, which plays a significant role in improving the structure and photoelectric properties of materials. Lu et al prepared Zr-doped VO 2 films on glass substrates by a sol–gel method and found that the MIT temperature decreases with the increase of doping concentration.…”
Section: Introductionmentioning
confidence: 99%