Effect of Zr doping power on the electrical, optical and structural properties of In–Zr–O anodes for P3HT : PCBM thin-film organic solar cells

Abstract

We investigated the effect of Zr doping power on the electrical, optical, structural and morphological properties of ZrO 2 and In 2 O 3 co-sputtered In-Zr-O (IZrO) thin films as transparent anodes for bulk-heterojunction organic solar cells (OSCs). Increased Zr doping power led to increased resistivity of as-deposited IZrO films while decreased resistivity of IZrO films annealed at 500 • C. Regardless of the Zr doping power, the IZrO film showed a high optical transmittance in the visible wavelength region and near infrared (NIR) wavelength region. The optimized IZrO film doped with 50 W ZrO 2 radio frequency power showed a sheet resistance of 20.71 /square and transmittance of 83.9%, which is comparable to the value of conventional In-Sn-O (ITO) films. The electronic structures measured by spectroscopic ellipsometry indicated expansion of unoccupied states near the conduction band with increased ZrO 2 doping power. OSCs with transparent IZrO anodes exhibited similar performances to OSCs with reference ITO anodes due to the similar optical properties of IZrO and ITO films in the visible wavelength region. Due to their high transmittance in the NIR wavelength region, IZrO films are a promising replacement for ITO anodes in NIR absorbing OSCs.

Role of dopants as a carrier suppressor and strong oxygen binder in amorphous indium-oxide-based field effect transistor

“…Most of the amorphous oxide TFTs have been developed based on the electronegativity and standard electrode potential of dopants. 58,62,65 Three decades ago, Wen et al, 80 recently Kim research group [81][82][83][84][85][86][87][88][89][90][91][92] and Parthiban et al 34,93,94 have developed high-mobility Zr-, Germanium (Ge-), Sn-, W-, Nb-, Mo-, Si-, and Ti-doped indium oxide transparent conducting thin-films, which were followed by the development of empirical relations and postulates by Zhang. 95 The empirical relationship associated with electron negativity, ionic radii, and effective charge of dopants, was proposed by Zhang and defined the function as a scale for strength of Lewis acids.…”

Work function and interface control of amorphous IZO electrodes by MoO3 layer grading for organic solar cells

“…Until now, direct current (DC)-sputtered ITO films and printed PEDOT:PSS films have been the materials most commonly used as transparent anodes for conventional bulk heterojunction OSCs, although mismatched band alignment of ITO anodes and instability of PEDOT: PSS films still remain as critical problems [12,13]. To substitute ITO and diversify the anode materials available for OSCs, various transparent conducting oxide (TCO) films have been prepared by [14][15][16][17][18][19][20][21][22][23][24][25][26][27]. By the way, several sputtering techniques such as facing target sputtering, cylindrical sputtering, roll-to-roll sputtering, and combinatorial sputtering have been reported as technique for coating TCOs used in OSCs.…”

Rapidly Thermal Annealed Si-Doped In2O3 Films for Organic Photovoltaics

“…have been suggested as promising TCOs for high performance OPV cells. [4][5][6][7][8][9][10][11][12] Si-doped In 2 O 3 (ISO) film also has TCO material properties conferred by its high Lewis acid strength (LAS) and the high number of valence electrons of Si dopant, which is comparable to that of Sn dopant. As discussed by Maruyama et al, ISO film has higher mobility than Sn doped In 2 O 3 (ITO) film due to the existence of Si dopant.…”