Effective control of TEOS–PECVD thin film depositions

Carp, Mihaela; Dediu, Violeta; Pistritu, Florian; Laszlo, Edwin Alexandru; Iliescu, Ciprian

doi:10.1109/cas50358.2020.9268003

Cited by 3 publications

(4 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[21] Stress tuning in the SiO2 passivation layer correlated with a reasonable deposition rate, good uniformity, and good quality of the deposited layer is the primary desire for most of the MEMS mentioned above. [20] Lowstress TEOS deposition and low temperature can be achieved by controlling the deposition process. In [20], Carp et al reported thin films TEOS deposited on PECVD reactors with a deposition rate of 210nm/min (nonuniformity 1.3%), residual stress -9.5Mpa and refractive index 1.456.…”

Section: Teosmentioning

confidence: 99%

“…[20] Lowstress TEOS deposition and low temperature can be achieved by controlling the deposition process. In [20], Carp et al reported thin films TEOS deposited on PECVD reactors with a deposition rate of 210nm/min (nonuniformity 1.3%), residual stress -9.5Mpa and refractive index 1.456.…”

Section: Teosmentioning

confidence: 99%

“…The temperature seemed not to affect the refractive index. [20,26] However, the deposition rate decreases with increasing temperature. The residual stress in the silicon oxide is found to be tensile at lower temperatures and more compressive at higher temperatures (Figure 3b).…”

Section: Influence Of the Temperaturementioning

confidence: 99%

“…Plasma-enhanced chemical vapour deposition (PECVD) is one of the techniques frequently used in MEMS manufacturing. A relevant number of reports reveal the structural, optical and electronic properties of the classical PECVD thin layers such as amorphous silicon, [13][14][15] doped amorphous/polysilicon, [16] silicon oxide, [17][18][19] or TEOS [20,21], silicon nitride, [22][23][24], silicon carbide [25][26][27] or diamond like carbon [28,29] Besides their role as a "passivation layer", the thin film PECVD layers were also used as a structural layer for surface micromachined MEMS devices [14], ] and as a masking layer for deep wet or dry etching (bulk micromachining) [14,30,31], electrodes [32,33] structural layer in solar cells, [34,35] or in applications related cell cultures. [23,[36][37][38].…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

A Comprehensive Review on Thin Film Depositions on Pecvd Reactors

Iliescu¹

2021

AnnalsARSciInfo

Self Cite

View full text Add to dashboard Cite

The deposition of thin films by Plasma Enhanced Chemical Vapor Deposition (PECVD) method is a critical process in the fabrication of MEMS or semiconductor devices. The current paper presents an comprehensive overview of PECVD process. After a short description of the PECVD reactors main layers and their application such as silicon oxide, TEOS, silicon nitride, silicon oxynitride, silicon carbide, amorphous silicon, diamond like carbon are presented. The influence of the process parameters such as: chamber pressure, substrate temperature, mass flow rate, RF Power and RF Power mode on deposition rate, film thickness uniformity, refractive index uniformity and film stress were analysed. The main challenge of thin films PECVD deposition for Microelectromechanical Systems (MEMS)and semiconductor devices is to optimize the deposition parameters for high deposition rate with low film stress which and if is possible at low deposition temperature.

show abstract

Section: Teosmentioning

confidence: 99%

Section: Teosmentioning

confidence: 99%

Section: Influence Of the Temperaturementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A Comprehensive Review on Thin Film Depositions on Pecvd Reactors

Iliescu¹

2021

AnnalsARSciInfo

Self Cite

View full text Add to dashboard Cite

show abstract

Influence of the base pressure in deposition of a‐SiCx interlayers for adhesion of Diamond‐Like Carbon on metallic alloy

Weber,

Goldbeck,

Piroli

et al. 2024

Surface & Interface Analysis

View full text Add to dashboard Cite

Diamond‐like carbon (DLC) is an amorphous material widely used in industrial applications due to its chemical, mechanical, and tribological properties and, also, for decorative purposes. However, its low adhesion to ferrous alloys reduces its effectiveness in certain applications, necessitating the use of adhesion interlayers to reduce stresses at the interfaces and enhance the density of strong bonds. In this context, the factors that promote good adhesion in this system and specify the parameters must be understood in detail. Thus, the present study aims to assess the influence of the base pressure on the deposition of an amorphous silicon carbide adhesion interlayer between DLC coating and a ferrous alloy substrate. Microstructural, physicochemical, morphological, and mechanotribological analyses were conducted to understand the adhesion behavior in terms of structural and chemical aspects. In addition to the influence of the interlayer thickness, the elemental Si/C ratios and the relative oxygen content have an impact on the maximum load supported by the coatings, as well as the different delamination mechanisms generated in adhesion tests.

show abstract