Effective creation of oxygen vacancies as an electron carrier source in tin-doped indium oxide films by plasma sputtering

Luo, Suning; Kono, Akihiko; Nouchi, Norimoto; Shoji, Fumiya

doi:10.1063/1.2372571

Cited by 42 publications

(21 citation statements)

References 14 publications

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“…7. This is very different from the results obtained using ITO films [8,9] and this seems to reflect the characteristics of the initial growth stage of the AZO films. …”

Section: Electrical Properties Of Azo Filmscontrasting

confidence: 76%

“…7. The fact that the straight line does not intersect the axis of film thickness d at zero is similar to what was found for ITO films [8,9]. Therefore, a discussion is warranted on whether the initial growth stage affects the electrical properties of thick AZO films.…”

Section: Structural Factors Affecting the Resistivity Of Azo Filmssupporting

confidence: 51%

“…260 • C [8]. This significant reduction in resistivity is thought to result from the effective creation of oxygen vacancies as electron carrier sources in the ITO film [9].…”

Section: Introductionmentioning

confidence: 99%

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Electrical properties of Al-doped ZnO films fabricated by a hot-cathode plasma sputtering method

Kono

Shoji

2009

Materials Science and Engineering: B

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“…7. This is very different from the results obtained using ITO films [8,9] and this seems to reflect the characteristics of the initial growth stage of the AZO films. …”

Section: Electrical Properties Of Azo Filmscontrasting

confidence: 76%

Section: Structural Factors Affecting the Resistivity Of Azo Filmssupporting

confidence: 51%

See 1 more Smart Citation

Electrical properties of Al-doped ZnO films fabricated by a hot-cathode plasma sputtering method

Kono

Shoji

2009

Materials Science and Engineering: B

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“…These dangling bonds extract the oxygen atoms in the growing ITO film and creates the oxygen vacancies in the ITO film. 26 So, the Ar ambient nature has significantly increased the oxygen vacancies and reduced the sheet resistance value close to the Ar+O 2 +H 2 ambient condition film. Another factor responsible for the large number of vacant sites in the Ar+O 2 +H 2 ambient sputtered ITO film.…”

Section: Resultsmentioning

confidence: 99%

Effect of ambient combinations of argon, oxygen, and hydrogen on the properties of DC magnetron sputtered indium tin oxide films

et al. 2015

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Sputtering has been well-developed industrially with singular ambient gases including neutral argon (Ar), oxygen (O2), hydrogen (H2) and nitrogen (N2) to enhance the electrical and optical performances of indium tin oxide (ITO) films. Recent preliminary investigation into the use of combined ambient gases such as an Ar+O2+H2 ambient mixture, which was suitable for producing high-quality (low sheet resistance and high optical transmittance) of ITO films. To build on this promising preliminary work and develop deeper insight into the effect of ambient atmospheres on ITO film growth, this study provides a more detailed investigation of the effects of ambient combinations of Ar, O2, H2 on sputtered ITO films. Thin films of ITO were deposited on glass substrates by DC magnetron sputtering using three different ambient combinations: Ar, Ar+O2 and Ar+O2+H2. The structural, electrical and optical properties of the three ambient sputtered ITO films were systematically characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman spectroscopy, four probe electrical conductivity and optical spectroscopy. The XRD and Raman studies confirmed the cubic indium oxide structure, which is polycrystalline at room temperature for all the samples. AFM shows the minimum surface roughness of 2.7 nm for Ar+O2+H2 sputtered thin film material. The thickness of the films was determined by the cross sectional SEM analysis and its thickness was varied from 920 to 817 nm. The columnar growth of ITO films was also discussed here. The electrical and optical measurements of Ar+O2+H2 ambient combinations shows a decreased sheet resistance (5.06 ohm/□) and increased optical transmittance (69%) than other samples. The refractive index and packing density of the films were projected using optical transmission spectrum. From the observed results the Ar+O2+H2 ambient is a good choice to enhance the total optoelectronic properties of the ITO films. The improved electrical and optical properties of ITO films with respect to the Ar+O2+H2 ambient sample were discussed in detail. In addition, the physical properties were also discussed with the influence of this ambient combination with respect to Ar, Ar+O2 and Ar+O2+H2.

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“…Numerous publications have addressed the challenge of achieving increasingly low resistivity and high optical transmission in these films [2][3][4][5][6][7]. This is an unusual combination of properties since good optical transmission requires a material with a band gap of greater than approximately 3.0 eV whilst high electrical conductivity necessitates a high number of free charge carriers with high mobility.…”

Section: Introductionmentioning

confidence: 99%

Low temperature remote plasma sputtering of indium tin oxide for flexible display applications

et al. 2009

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Abstract:Tin doped indium oxide (ITO) has been directly deposited onto a variety of flexible materials by a reactive sputtering technique that utilises a remotely generated, high density plasma. This technique, known as high target utilisation sputtering (HiTUS), allows for the high rate deposition of good quality ITO films onto polymeric materials with no substrate heating or post deposition annealing. Coatings with a resistivity of 3.8 ×10−4 Ωcm and an average visible transmission of greater than 90% have been deposited onto PEN and PET substrate materials at a deposition rate of 70 nm/min. The electrical and optical properties are retained when the coatings are flexed through a 1.0 cm bend radius, making them of interest for flexible display applications.

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Effective creation of oxygen vacancies as an electron carrier source in tin-doped indium oxide films by plasma sputtering

Abstract: Effects of excess oxygen introduced during sputter deposition on carrier mobility in as-deposited and postannealed indium-tin-oxide films

Cited by 42 publications

References 14 publications

Electrical properties of Al-doped ZnO films fabricated by a hot-cathode plasma sputtering method

Electrical properties of Al-doped ZnO films fabricated by a hot-cathode plasma sputtering method

Effect of ambient combinations of argon, oxygen, and hydrogen on the properties of DC magnetron sputtered indium tin oxide films

Low temperature remote plasma sputtering of indium tin oxide for flexible display applications

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