Effective Electrical Passivation of Ge(100) for HfO2 Gate Dielectric Layers Using O2 Plasma

Xie, Qi; Deduytsche, Davy; Schaekers, Marc; Caymax, Matty; Delabie, Annelies; Qu, Xin-Ping; Detavernier, Christophe

doi:10.1149/1.3551461

Cited by 21 publications

(15 citation statements)

References 25 publications

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“…Plasma Postoxidation. O 2 plasma treatment is a very effective approach to form low defect GeO 2 /Ge interfaces and GeO 2 IL at low substrate temperatures, due to the highly reactive O radicals [48,49]. Zhang et al have proposed a novel GeO 2 IL formation process by applying the electron cyclotron resonance (ECR) oxygen plasma to form high quality GeO ILs through a thin Al 2 O 3 oxygen barrier, which can realize a low it and a thin EOT of around 1 nm at the same time [33].…”

Section: Ge/dielectric Interface Passivation Methodsmentioning

confidence: 99%

Interface Engineering and Gate Dielectric Engineering for High Performance Ge MOSFETs

Sun

2015

Advances in Condensed Matter Physics

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In recent years, germanium has attracted intensive interests for its promising applications in the microelectronics industry. However, to achieve high performance Ge channel devices, several critical issues still have to be addressed. Amongst them, a high quality gate stack, that is, a low defect interface layer and a dielectric layer, is of crucial importance. In this work, we first review the existing methods of interface engineering and gate dielectric engineering and then in more detail we discuss and compare three promising approaches (i.e., plasma postoxidation, high pressure oxidation, and ozone postoxidation). It has been confirmed that these approaches all can significantly improve the overall performance of the metal-oxide-semiconductor field effect transistor (MOSFET) device.

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Section: Ge/dielectric Interface Passivation Methodsmentioning

confidence: 99%

Interface Engineering and Gate Dielectric Engineering for High Performance Ge MOSFETs

Sun

2015

Advances in Condensed Matter Physics

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“…Novel processes have been investigated, i.e. sulphur passivation [42], high pressure thermal oxidation [53,54], vacuum ultraviolet-assisted oxidation [55], plasma oxidation [56,57], radical oxidation [58,59], direct neutral beam oxidation [60], plasma postoxidation [61], and thermal molecular oxidation [62].…”

Section: Gate Dielectricsmentioning

confidence: 99%

Processing of germanium for integrated circuits

Duffy¹,

Shayesteh²,

Yu³

2014

Turk J Phys

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Abstract:In this review paper the authors will focus on Ge processing for integrated circuits. The key areas that require the most attention are substrates and integration, gate dielectrics, and access resistance. We will discuss each of these topics in turn, while also reviewing the most scaled Ge field-effect-transistor devices, and consider how modelling activities have matured for Ge in recent years.

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“…For Si-based devices, the main focus has been on HfCl 4 as Hf source, but promising results have been reported on the use of TEMAH for the growth of HfO 2 on Ge. [8][9][10][11][12] Because of the low vapor pressure of the TEMAH precursor, Ar was used as carrier gas. All experiments were carried out at a substrate temperature of 200°C.…”

mentioning

confidence: 99%

In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition: Initial growth of HfO2 on Si and Ge substrates

Devloo-Casier¹,

Dendooven²,

Ludwig³

et al. 2011

Applied Physics Letters

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The initial growth of HfO 2 was studied by means of synchrotron based in situ x-ray fluorescence ͑XRF͒ and grazing incidence small angle x-ray scattering ͑GISAXS͒. HfO 2 was deposited by atomic layer deposition ͑ALD͒ using tetrakis͑ethylmethylamino͒hafnium and H 2 O on both oxidized and H-terminated Si and Ge surfaces. XRF quantifies the amount of deposited material during each ALD cycle and shows an inhibition period on H-terminated substrates. No inhibition period is observed on oxidized substrates. The evolution of film roughness was monitored using GISAXS. A correlation is found between the inhibition period and the onset of surface roughness.

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Effective Electrical Passivation of Ge(100) for HfO2 Gate Dielectric Layers Using O2 Plasma

Cited by 21 publications

References 25 publications

Interface Engineering and Gate Dielectric Engineering for High Performance Ge MOSFETs

Interface Engineering and Gate Dielectric Engineering for High Performance Ge MOSFETs

Processing of germanium for integrated circuits

In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition: Initial growth of HfO2 on Si and Ge substrates

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