Effective gating and tunable magnetic proximity effects in two-dimensional heterostructures

Lazić, Predrag; Belashchenko, Kirill D.; Žutić, Igor

doi:10.1103/physrevb.93.241401

Cited by 100 publications

(110 citation statements)

References 63 publications

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“…Scattering caused by random impurities could be detrimental to its high carrier mobility which is a unique electronic property of graphene that should be preserved. A number of systems have been studied using DFT‐based first‐principles calculations . Lazić et al pointed out that first‐principles methods are key to assess ferromagnet/graphene junctions, but it is crucial to include van der Waals interactions for correct descriptions of the magnetic proximity effect .…”

Section: Spin Generationmentioning

confidence: 99%

Prospects of spintronics based on 2D materials

Feng

Shen

Yang

et al. 2017

WIREs Comput Mol Sci

197

135

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Spintronics holds the promise for future information technologies. Devices based on manipulation of spin are most likely to replace the current silicon complementary metal‐oxide semiconductor devices that are based on manipulation of charge. The challenge is to identify or design materials that can be used to generate, detect, and manipulate spin. Since the successful isolation of graphene and other two‐dimensional (2D) materials, there has been a strong focus on spintronics based on 2D materials due to their attractive properties, and much progress has been made, both theoretically and experimentally. Here, we summarize recent developments in spintronics based on 2D materials. We focus mainly on materials of truly 2D nature, that is, atomic crystal layers such as graphene, phosphorene, monolayer transition metal dichalcogenides, and others, but also highlight current research foci in heterostructures or interfaces. In particular, we emphasize roles played by computation based on first‐principles methods which has contributed significantly in the designs of spintronic materials and devices. We also highlight challenges and suggest possible directions for further studies. WIREs Comput Mol Sci 2017, 7:e1313. doi: 10.1002/wcms.1313 This article is categorized under: Structure and Mechanism > Computational Materials Science Electronic Structure Theory > Ab Initio Electronic Structure Methods Electronic Structure Theory > Density Functional Theory

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Section: Spin Generationmentioning

confidence: 99%

Prospects of spintronics based on 2D materials

Feng

Shen

Yang

et al. 2017

WIREs Comput Mol Sci

197

135

View full text Add to dashboard Cite

show abstract

“…One prominent example is graphene, which experiences strong proximity spin-orbit coupling (SOC) effects when placed on transition-metal dichalcogenides [1,2], and a giant field-effect SOC when bilayer graphene (BLG) is used [3]. Typical experimental structures like graphene/hBN/ferromagnet, showing very efficient spin injection [4][5][6][7][8], also feature significant proximity exchange [9,10]. These heterostructures are presently used in optospintronic devices [1,11,12] and also for spin transport [4][5][6][7][8] in graphene spintronics [13].…”

Section: Introductionmentioning

confidence: 99%

Electrically tunable exchange splitting in bilayer graphene on monolayer Cr₂X₂Te₆ with X = Ge, Si, and Sn

2018

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We investigate the electronic band structure and the proximity exchange effect in bilayer graphene (BLG) on a family of ferromagnetic multilayers Cr 2 X 2 Te 6 , X=Ge, Si, and Sn, with first principles methods. In each case the intrinsic electric field of the heterostructure induces an orbital gap on the order of 10 meV in the graphene bilayer. The proximity exchange is strongly band-dependent. For example, in the case of Cr 2 Ge 2 Te 6 , the low energy valence band of BLG has exchange splitting of 8 meV, while the low energy conduction band's splitting is 30 times less (0.3 meV). This striking discrepancy stems from the layer-dependent hybridization with the ferromagnetic substrate. Remarkably, applying a vertical electric field of a few V nm -1 reverses the exchange, allowing us to effectively turn ON and OFF proximity magnetism in BLG. Such a field-effect should be generic for van der Waals bilayers on ferromagnetic insulators, opening new possibilities for spin-based devices.

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“…These borophene structures have been reported as unstable in isolated form, but this instability could be overcome with vacancy defect and deposition on some non-reactive surface [28]. Existence of massless Dirac fermions in these two polymorphs makes them even more compelling towards the nano-electronic applications [29,30].Additionally, these polymorphs have shown phonon meditated superconductivity [31], and because of the light weight, diverse electronic properties and mechanical stability, they have been reported as high capacity electrode for electrochemical applications [32][33][34] and as catalyst for hydrogen evolution reaction [35].Typically, several approaches can be applied to engineer the electronic structure of 2D materials, like electrostatic gating and molecular adsorption, that have been used for graphene, phosphorene and others [36][37][38][39]. Moreover, electronic, transport and optical properties are considerably determined by atomic geometry, and it follows that strain is the most suitable way to tune intrinsic properties of these 2D materials.…”

mentioning

confidence: 99%

Strain controlled electronic and transport anisotropies in two-dimensional borophene sheets

Shukla

Grigoriev

Jena

et al. 2018

Phys. Chem. Chem. Phys.

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Two recent reports on realization of an elemental 2D analogue of graphene:borophene (Science, 2015, 350, 1513-1516; Nat. Chem., 2016, 8, 563-568) focus on the inherent anisotropy and directional dependence of the electronic properties of borophene polymorphs. Achieving stable 2D borophene structures may lead to some degree of strain in the system because of the substrate-lattice mismatch. We use first principles density functional theory (DFT) calculations to study the structural, electronic and transport properties of β12 and χ-borophene polymorphs. We verified the directional dependency and found the tunable anisotropic behavior of the transport properties in these two polymorphs. We find that strain as low as 6% brings remarkable changes in the properties of these two structures. We further investigate current-voltage (I-V) characteristics in the low bias regime after applying a strain to see how the anisotropy of the current is affected. Such observations like the sizeable tuning of transport and I-V characteristics at the expense of minimal strain suggest the suitability of 2D borophene for futuristic device applications.

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Effective gating and tunable magnetic proximity effects in two-dimensional heterostructures

Cited by 100 publications

References 63 publications

Prospects of spintronics based on 2D materials

Prospects of spintronics based on 2D materials

Electrically tunable exchange splitting in bilayer graphene on monolayer Cr₂X₂Te₆ with X = Ge, Si, and Sn

Strain controlled electronic and transport anisotropies in two-dimensional borophene sheets

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Effective gating and tunable magnetic proximity effects in two-dimensional heterostructures

Cited by 100 publications

References 63 publications

Prospects of spintronics based on 2D materials

Prospects of spintronics based on 2D materials

Electrically tunable exchange splitting in bilayer graphene on monolayer Cr2X2Te6 with X = Ge, Si, and Sn

Strain controlled electronic and transport anisotropies in two-dimensional borophene sheets

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Product

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Electrically tunable exchange splitting in bilayer graphene on monolayer Cr₂X₂Te₆ with X = Ge, Si, and Sn