2019
DOI: 10.1021/acsami.9b13442
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Effective Hexagonal Boron Nitride Passivation of Few-Layered InSe and GaSe to Enhance Their Electronic and Optical Properties

Abstract: Indium selenide (InSe) and gallium selenide (GaSe), members of the III−VI chalcogenide family, are emerging two-dimensional (2D) semiconductors with appealing electronic properties. However, their devices are still lagging behind because of their sensitivity to air and device fabrication processes which induce structural damage and hamper their intrinsic properties. Thus, in order to obtain high-performance and stable devices, effective passivation of these air-sensitive materials is strongly required. Here, w… Show more

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Cited by 59 publications
(70 citation statements)
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“…), the absorption coefficient estimated above can be applied to the whole analyzed spectral range. The responsivity ( R = I ph /( P × A ); P is incident power density, A is exposed device area) is found to be 4 mA W −1 at 300 K (λ = 785 nm, P = 0.14 W cm −2 , V = −1 V), which is comparable to the values obtained for the first demonstrations of photodetectors based on black phosphorus (4.8 mA W −1 ) and graphene (<6 mA W −1 ) . However, in the present device configuration, responsivity is strongly dependent on device geometry and can vary significantly with the active area of the photodetector .…”
supporting
confidence: 81%
See 1 more Smart Citation
“…), the absorption coefficient estimated above can be applied to the whole analyzed spectral range. The responsivity ( R = I ph /( P × A ); P is incident power density, A is exposed device area) is found to be 4 mA W −1 at 300 K (λ = 785 nm, P = 0.14 W cm −2 , V = −1 V), which is comparable to the values obtained for the first demonstrations of photodetectors based on black phosphorus (4.8 mA W −1 ) and graphene (<6 mA W −1 ) . However, in the present device configuration, responsivity is strongly dependent on device geometry and can vary significantly with the active area of the photodetector .…”
supporting
confidence: 81%
“…Irrespective of temperature, a strong and reproducible switching behavior is revealed in Figure a, which demonstrates a stable operation of the MOF‐device under pulsed irradiation. The response times for both rise and decay processes are extracted from the data as the time required by the photodetector to reach from 10% to 90% of the peak photocurrent after the illumination is turned on and vice versa after it is turned off, respectively . From Figure b, the rise and decay times at 77 K are found to be 2.3 and 2.15 s, respectively, an increase from ≈1.7 s for both at 300 K. On testing multiple samples, response times in the range of 1–3 s are obtained.…”
mentioning
confidence: 99%
“…5,16,19,[87][88][89] To date, it is the most used technique for producing high-quality InSe and GaSe layers. 11,18,74,[90][91][92] It involves repetitive peeling of the bulk crystal with the help of an adhesive tape until thin layers are obtained. 57,89 The tape containing the freshly cleaved flakes is adhered to an intermediate transfer polymer or directly onto the final substrate.…”
Section: Mechanical Exfoliationmentioning
confidence: 99%
“…114,122,126 is, three layers in the unit cell are stacked with an offset in the a-b plane (side view of few-layered InSe in Figure 5A). 91 The top and side views present each monolayer consisting of four covalently bonded atoms in the sequence Se-In-In-Se. The primitive unit cell has an outof-plane lattice parameter c = 2.4961 nm (along the c-axis).…”
Section: Crystal Structurementioning
confidence: 99%
“…A solution for this issue is to embed the InSe flake in hBN. This encapuslation procedure protects the material from contamination and assures good optical and electronic properties, as shown recently for InSe itself and other vdW materials [16][17][18]. * t.venanzi@hzdr.de Here, we present an investigation of the photoluminescence emission from thin flakes of InSe of different thicknesses encapsulated in hBN.…”
Section: Introductionmentioning
confidence: 78%