Effective minority carrier lifetime and distribution of steady-state excess minority carriers in macroporous silicon

Onyshchenko, V.F.; Карачевцева, Л. А.

doi:10.15407/hftp08.03.322

Cited by 8 publications

(4 citation statements)

References 18 publications

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“…For ease of calculation, assuming that the silicon wafer is illuminated by monochromatic light with wavelength of 900 nm, the absorption coefficient α is 100 cm −1 and the total number of photons P is 10 19 cm −2 •s −1 . Additionally, the diffusion coefficient and lifetime of minority carriers are 12 cm 2 /s and 10 µs, respectively [44]. In addition to this, the temperature is set as 290 K according to our experimental condition.…”

Section: Discussionmentioning

confidence: 99%

Fabrication of Ordered Macropore Arrays in n-Type Silicon Wafer by Anodic Etching Using Double-Tank Electrochemical Cell

Zhang,

et al. 2024

Micromachines

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In this work, ordered macropore arrays in n-type silicon wafers were fabricated by anodic etching using a double-tank electrochemical cell. The effects of the wafer thickness, etching time and voltage on the quality of macropore arrays were investigated. Homogeneous macropore arrays could be achieved in 200 μm thick silicon wafers, but could not be obtained from 300 and 400 μm thick silicon wafers. Highly ordered macropore arrays with an aspect ratio of 19 were fabricated in 200 μm thick n-type silicon at 4.5 V. The etching current decreases in 200 μm thick silicon but increases in thicker silicon with an increase in time. It demonstrates that the minority carrier transportation capability from the illuminated surface to the reactive surface is different for silicon wafers with different thicknesses. The minority carrier concentration at the illuminated surface for stable macropore formation and the current under different etching voltages were calculated based on a hole transport model. The results show that appropriately decreasing wafer thickness and increasing voltage can help stable macropore array fabrication in the illumination-limited double-tank cell.

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Section: Discussionmentioning

confidence: 99%

Fabrication of Ordered Macropore Arrays in n-Type Silicon Wafer by Anodic Etching Using Double-Tank Electrochemical Cell

Zhang,

et al. 2024

Micromachines

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“…here: δp(x) is the distribution function of the excess minority carrier concentration in the x-direction, τ effeffective recombination time of excess minority carriers in the layer of macroporous silicon [3,14,15], D pdiffusion coefficient of minority carriers. The minority carrier diffusion equation for above conditions is:…”

Section: Numerical Calculation Of the Distribution Kinetics Of The Spmentioning

confidence: 99%

“…The effective lifetime of photocarriers in absorbers based on macroporous thin films decreases due to recombination at large areas of the pore surface [2]. The effective carrier lifetime of surface-passivated macroporous silicon [2,3] and black silicon with cones and pyramids [4] is dependent on the surface morphology and passivation, bulk lifetime. Gas [5,6] and biological sensors [7] are developed on the porous silicon with CMOS-compatible manufacturing.…”

Section: Introductionmentioning

confidence: 99%

Photoconductivity relaxation and electron transport in macroporous silicon structures

Карачевцева¹

2017

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Kinetics and temperature dependence of photoconductivity were measured in macroporous silicon at 80…300 K after light illumination with the wavelength 0.9 μm. The influence of mechanisms of the charge carrier transport through the macropore surface barrier on the kinetics of photoconductivity at various temperatures was investigated. The kinetics of photoconductivity distribution in macroporous silicon and Si substrate has been calculated using the finite-difference time-domain method. The maximum of photoconductivity has been found both in the layer of macroporous silicon and in the monocrystalline substrate. The kinetics of photoconductivity distribution in macroporous silicon showed rapid relaxation of the photoconductivity maximum in the layer of macroporous silicon and slow relaxation of it in the monocrystalline substrate.

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“…Effective conductivity and photoconductivity in macroporous silicon decrease with increasing of concentration and volume fraction of macropores and reduction in the thickness of the space charge region (SCR) at small macropore diameters [11]. An analytical model for the effective carrier lifetimes of surface-passivated macroporous silicon [12,13] and black silicon nano-textured by cones and pyramids [6] allowed determining the effective minority carrier lifetime as a function of bulk lifetime, surface passivation and morphology. The numerical calculation of the distribution of excess minority carrier concentration in macroporous silicon in case of the spatially homogeneous generation of charge-carriers is made in [14].…”

Section: Introductionmentioning

confidence: 99%

Relaxation of excess minority carrier distribution in macroporous silicon

Карачевцева¹,

Onyshchenko²

2018

Him. Fiz. Tehnol. Poverhni

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Relaxation of the excess minority carrier distribution in macroporous silicon structure was calculated using the finite difference method. The initial distribution of the excess minority carriers has two maxima after carrier generation by electromagnetic wavelength 0.95 μm with small absorption depth. The first maximum of the initial distribution function is in macroporous layer, the second one is in monocrystalline substrate. Surface recombination leads to the diffusion of excess charge carriers to recombination centers and creates the non-homogeneity of the excess charge carrier distribution. A rapid maximum decrease of the excess carrier distribution function in a macroporous layer and near the boundary of a macroporous layer and monocrystalline substrate is found. The slow decrease of the distribution function in a monocrystalline substrate is evaluated. We observed one maximum of the excess minority carrier distribution after homogeneous carrier generation by electromagnetic wavelength 1.05 μm with big absorption depth. The rate of change in the concentration of excess minority carriers decreases in time in macroporous silicon layer due to high recombination and increases due to diffusion to the surface of silicon substrate after generation by the electromagnetic wave 0.95 μm with small absorption depth. The rate of change in the concentration of excess minority carriers decreases in time in the entire structure after generation by the electromagnetic wave 1.05 μm with big absorption depth and small non-homogeneity.

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Effective minority carrier lifetime and distribution of steady-state excess minority carriers in macroporous silicon

Cited by 8 publications

References 18 publications

Fabrication of Ordered Macropore Arrays in n-Type Silicon Wafer by Anodic Etching Using Double-Tank Electrochemical Cell

Fabrication of Ordered Macropore Arrays in n-Type Silicon Wafer by Anodic Etching Using Double-Tank Electrochemical Cell

Photoconductivity relaxation and electron transport in macroporous silicon structures

Relaxation of excess minority carrier distribution in macroporous silicon

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