Effective neutron detection using vertical-type BGaN diodes

Nakano, Takayuki; Mochizuki, K.; Arikawa, Takuya; Nakagawa, Hisaya; Usami, Shigeyoshi; Honda, Yoshio; Amano, Hiroshi; Vogt, A.; Schütt, Sebastian; Fiederle, M.; Kojima, Kazunobu; Chichibu, Shigefusa F.; Inoue, Yasuo; Aoki, Toru

doi:10.1063/5.0051053

Cited by 7 publications

(6 citation statements)

References 36 publications

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“…To investigate the phase purity of the sample, cross-sectional STEM images are taken (figure 3(a)). Like earlier reports, the image shows a wurtzite material rich in stacking faults which enable the presence of zincblende inclusions in the film [23][24][25]. The sample is then measured using EELS to investigate its bandgap and aid in the interpretation of the band alignment.…”

Section: Resultsmentioning

confidence: 62%

Detailed band alignment of high-B-composition BGaN with GaN and AlN

AlQatari,

Liao,

Aguileta-Vazquez

et al. 2023

J. Phys. D: Appl. Phys.

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The electronic structure of B0.097Ga0.903N was determined by examining its bandgap and valence band offset (VBO) in detail. The BGaN sample was grown using a horizontal reactor metalorganic chemical vapor deposition. For bandgap determination, three different techniques were utilized yielding similar results, which are: UV-Vis spectroscopy, Schottky photodiodes, and electron energy-loss spectroscopy. The bandgap was determined to be ~3.55 eV. For measuring the VBO, the valence edges and the core levels of Al 2s and Ga 2p were measured using x-ray photoelectron spectroscopy (XPS). The valence edges were then fitted and processed along with the core levels using the standard Kraut method for VBO determination with AlN. The BGaN/AlN alignment was found to be -1.1 ± 0.1 eV. Due to core level interference between GaN and BGaN, the Kraut method fails to provide precise VBO for this heterojunction. Therefore, a different technique is devised to analyze the measured XPS data which utilizes the alignment of the Fermi levels of the BGaN and GaN layers when in contact. Statistical analysis was used to determine the BGaN/GaN alignment with decent precision. The value was found to be -0.3 ± 0.1 eV.

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Section: Resultsmentioning

confidence: 62%

Detailed band alignment of high-B-composition BGaN with GaN and AlN

AlQatari,

Liao,

Aguileta-Vazquez

et al. 2023

J. Phys. D: Appl. Phys.

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“…(18,19) BGaN, an alloy crystal containing BN and GaN, has recently been proposed as a neutron detector semiconductor. (20)(21)(22)(23) BGaN neutron detectors are advantageous because the B atom has a large neutron capture cross-sectional area. Owing to the existence of atomic-level B convertors in semiconductors, BGaN can detect the energy of generated-charged particles using the 10 B (n, a) 7 Li neutron capture reaction.…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, neutron detection using a vertical BGaN PIN diode detector has been reported. (21) Hence, neutron detectors based on group-III nitride semiconductors have potential applicability.…”

Section: Introductionmentioning

confidence: 99%

Temperature Dependence of α-Particle Detection Performance of GaN PIN Diode Detector

Nakagawa,

Hayashi,

Miyazawa

et al. 2024

Sensors and Materials

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Group-III nitride semiconductors, such as gallium nitride (GaN), have been proposed as novel materials for radiation detection owing to their wide bandgap and their ability to operate at high temperatures. In this study, the radiation detection properties of GaN PIN diode detectors were evaluated at high temperatures (~573 K). The energy spectrum peak profiles of 241 Am α-particles were obtained at different temperatures, confirming the operation of GaN PIN diodes up to 573 K. The peak positions shifted toward the lower-energy side and the full width at half maximum (FWHM) of the detection energy peak improved with increasing temperature. Furthermore, the variation in electron carrier mobility-lifetime product (μ e τ e ) between 293 and 573 K was not significant. These results indicate the potential high-temperature operation of group-III nitride semiconductors. Additionally, the variation in each detection characteristic was caused by increasing the atmospheric temperature, which affected the mobility, lattice scattering, bandgap, and built-in potential differently.

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“…8,9) Recently, studies have also evaluated their application in solar cells, 10,11) highpower transistors, 12,13) and radiation detectors. 14,15) GaN crystal has a wurtzite crystal structure with two polarities along the c-axis direction, namely, Ga-polar GaN and N-polar GaN. 16,17) Each type of polar GaN has a different sign for the second-order nonlinear susceptibility, and GaN quasi-phase-matching (QPM) crystals can be fabricated by arranging each polar structure periodically.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and evaluation of rib-waveguide-type wavelength conversion devices using GaN-QPM crystals

Ishihara

Shimada

Umeda

et al. 2022

Jpn. J. Appl. Phys.

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A GaN crystal comprises two polar structures along the c-axis direction, and functions as a quasi-phase-matching (QPM) crystal by fabricating a periodic inversion structure. We fabricated GaN-QPM crystals to design rib-waveguide-type devices for achieving highly efficient wavelength conversion. The QPM period required for wavelength conversion was calculated in the design phase of the device structure. GaN-QPM crystals with the obtained period were fabricated using double-polarity selective-area growth (DP-SAG). The GaN-QPM crystal was then used to fabricate a second-harmonic generation (SHG) device with a rib waveguide structure. Optical measurements revealed that the device achieved wavelength conversion from 840 to 420 nm. Further, the SHG device exhibited a wavelength conversion efficiency of 1.5 × 10-4 % W-1. These results indicated that GaN-QPM crystals fabricated by DP-SAG can be used for wavelength conversion.

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Effective neutron detection using vertical-type BGaN diodes

Cited by 7 publications

References 36 publications

Detailed band alignment of high-B-composition BGaN with GaN and AlN

Detailed band alignment of high-B-composition BGaN with GaN and AlN

Temperature Dependence of α-Particle Detection Performance of GaN PIN Diode Detector

Fabrication and evaluation of rib-waveguide-type wavelength conversion devices using GaN-QPM crystals

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