2017
DOI: 10.1109/led.2017.2687820
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Effective Richardson Constant of Sol-Gel Derived TiO2Films in n-TiO2/p-Si Heterojunctions

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Cited by 35 publications
(15 citation statements)
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“…All of the devices showed Schottky nature having rectification ratio more than 150 at ±1 V. The diode parameters such as diode ideality factor (η), barrier height (ϕ B ), and series resistance ( R s ) of S1, S2, and S3 samples were calculated from the Cheung–Cheung method using the following formula The symbols V , η, q , K B , T , A , and A * in the above expressions represent the applied bias voltage, ideality factor, electronic charge, Boltzmann constant, absolute temperature in Kelvin, effective area of the device, and Richardson constant (∼1200 A cm –2 K –2 for TiO 2 ), respectively.…”
Section: Resultsmentioning
confidence: 99%
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“…All of the devices showed Schottky nature having rectification ratio more than 150 at ±1 V. The diode parameters such as diode ideality factor (η), barrier height (ϕ B ), and series resistance ( R s ) of S1, S2, and S3 samples were calculated from the Cheung–Cheung method using the following formula The symbols V , η, q , K B , T , A , and A * in the above expressions represent the applied bias voltage, ideality factor, electronic charge, Boltzmann constant, absolute temperature in Kelvin, effective area of the device, and Richardson constant (∼1200 A cm –2 K –2 for TiO 2 ), respectively.…”
Section: Resultsmentioning
confidence: 99%
“…The symbols V, η, q, K B , T, A, and A* in the above expressions represent the applied bias voltage, ideality factor, electronic charge, Boltzmann constant, absolute temperature in Kelvin, effective area of the device, and Richardson constant (∼1200 A cm −2 K −2 for TiO 2 ), 33 respectively. Figure 4c,d represents the dV/d(ln I) vs I and H(I) vs I plots of the S3 sample.…”
Section: Resultsmentioning
confidence: 99%
“…In-Ga alloy connects TiO 2 and electrode with an Ohmic contact, so the contact properties of TiO 2 with Au or ITO can be revealed by replacing one of the In-Ga alloy layers. In Au/TiO 2 /In-Ga structure, the Schottky contact of Au and TiO 2 can be corroborated by 31,32 . Whereas, for In-Ga/TiO 2 /ITO structure, the linear I-V plot in Fig.…”
Section: Resultsmentioning
confidence: 79%
“…1 b. The Schottky barrier height calculated from I–V data by Cheung’s method is approximately 0.8 eV 31 , 32 . Whereas, for In-Ga/TiO 2 /ITO structure, the linear I – V plot in Fig.…”
Section: Resultsmentioning
confidence: 95%
“…Further, in order to calculate the barrier height, fitting of the current curves was performed with I=AAT2expeΦsbkT []expeαVkT1 equation, where A * is the effective Richardson constant for hot electron emission, which is about ≈1265.57 A cm –2 K 2 for the TiO 2 used in our experiment, A is the contact area between the probe and the TiO 2 sample, T is the Kelvin temperature, e is the elementary charge, and k is the Boltzmann constant. [ 29,30 ] Flexoelectric polarization is generated as a result of increasing the applied force, and this polarization modulates the effective barrier height. In fact, Φ sb improves by 17 mV as applied force increases, indicating that the charge transport mechanism across the heterostructure could indeed be modulated by applied force.…”
Section: Resultsmentioning
confidence: 99%