2021
DOI: 10.1109/jphotov.2020.3035122
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Effective Surface Texturing of Diamond-Wire-Sawn Multicrystalline Silicon Wafers Via Crystallization of the Native Surface Amorphous Layer

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Cited by 3 publications
(4 citation statements)
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“…The characteristic bands of the diamond cube c-Si (Si-I) were observed as sharp peaks at 300 and 521 cm −1 , a-Si was represented by a broad peak at 480 cm −1 , and Si III and Si XII were represented by the broad peak at ≈161 cm −1 . [35] In our previous study, [15] the a-Si layer was crystallized at temperatures exceeding 700 °C. Thus, in this study, the comparison against the reference solar cell was focused on SDGT at 800 °C, which showed the highest efficiency.…”
Section: Texturing Resultsmentioning
confidence: 99%
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“…The characteristic bands of the diamond cube c-Si (Si-I) were observed as sharp peaks at 300 and 521 cm −1 , a-Si was represented by a broad peak at 480 cm −1 , and Si III and Si XII were represented by the broad peak at ≈161 cm −1 . [35] In our previous study, [15] the a-Si layer was crystallized at temperatures exceeding 700 °C. Thus, in this study, the comparison against the reference solar cell was focused on SDGT at 800 °C, which showed the highest efficiency.…”
Section: Texturing Resultsmentioning
confidence: 99%
“…In our previous study, [ 15 ] the a‐Si layer was crystallized at temperatures exceeding 700 °C. Thus, in this study, the comparison against the reference solar cell was focused on SDGT at 800 °C, which showed the highest efficiency.…”
Section: Resultsmentioning
confidence: 99%
See 2 more Smart Citations