Effectiveness of Si thin buffer layer for selective SiGe epitaxial growth in recessed source and drain for pMOS

Cheng, Pan; Liao, Chin-I; Chien, Cheng-Chung; Yang, C. L.; Ting, Shyh-Fann; Jeng, L. S.; Huang, Cheng Tung; Cheng, Osbert; Tzou, S.F.; Hsu, Wensyang

doi:10.1016/j.matchemphys.2007.08.020

Cited by 1 publication

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“…If we omit this process, epitaxial growth will not occur at a substrate temperature lower than 723 K. A 50-nm-thick Si buffer layer was deposited at 873 K immediately prior to the Si/GeB deposition to obtain a clean epitaxial growth surface by which the crystallinity of the deposited film was improved. 11,12) Rapid thermal annealing (RTA) equipment was used for annealing the samples.…”

Section: Methodsmentioning

confidence: 99%

Crystallinity and Thermoelectric Properties of Si/GeB Multilayers Prepared with Si Buffer Layer and SiO₂ Substrates

Matoba

Sasaki

Kumeda

2009

jjap

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Si/GeB multilayers were prepared by ion-beam sputtering technique and the effect of the crystallinity on thermoelectric properties was investigated. The crystallinity of the samples was controlled using Si buffer and SiO2 layers. Samples prepared on the Si buffer layer show similar properties to samples prepared on a Si wafer without the buffer layer. Moreover, it is found that the resistivity of the samples prepared on the Si buffer layer is lower than that of the samples prepared on the Si wafer without the buffer layer because of the surface cleaning effect. On the other hand, samples prepared on SiO2 show poor thermoelectric properties. These results are caused by the change in the crystallinity and periodicity, which are related to the carrier confinement effect. After thermal annealing, it is found that the multilayer structure is degraded rapidly and that the sign of the thermoelectric power is changed. This is considered to be caused by crystalline defects in the interfaces due to the collapse of the multilayer structure.

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Section: Methodsmentioning

confidence: 99%

Crystallinity and Thermoelectric Properties of Si/GeB Multilayers Prepared with Si Buffer Layer and SiO₂ Substrates

Matoba

Sasaki

Kumeda

2009

jjap

View full text Add to dashboard Cite

show abstract

Effectiveness of Si thin buffer layer for selective SiGe epitaxial growth in recessed source and drain for pMOS

Cited by 1 publication

References 5 publications

Crystallinity and Thermoelectric Properties of Si/GeB Multilayers Prepared with Si Buffer Layer and SiO₂ Substrates

Crystallinity and Thermoelectric Properties of Si/GeB Multilayers Prepared with Si Buffer Layer and SiO₂ Substrates

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Effectiveness of Si thin buffer layer for selective SiGe epitaxial growth in recessed source and drain for pMOS

Cited by 1 publication

References 5 publications

Crystallinity and Thermoelectric Properties of Si/GeB Multilayers Prepared with Si Buffer Layer and SiO2 Substrates

Crystallinity and Thermoelectric Properties of Si/GeB Multilayers Prepared with Si Buffer Layer and SiO2 Substrates

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Resources

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Crystallinity and Thermoelectric Properties of Si/GeB Multilayers Prepared with Si Buffer Layer and SiO₂ Substrates

Crystallinity and Thermoelectric Properties of Si/GeB Multilayers Prepared with Si Buffer Layer and SiO₂ Substrates