Effects and mechanisms of In surfactant on high Al-content AlGaN grown by plasma-assisted molecular beam epitaxy

Jia, Haolin; Yang, Weishen; Zhang, Xue; Zhou, Xiangpeng; Qiu, Haibing; Qin, Huashu; Lu, Shulong; Bian, Lifeng

doi:10.1364/oe.445600

Cited by 8 publications

(2 citation statements)

References 31 publications

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“…For an example, by introducing In-surfactant in InGaN/GaN multi-quantum well (MQW) growth of green LEDs, particularly in QBs [10][11][12]. Such technique promoted sharp and smooth interfaces [13,14], while controlling threading dislocations (TDs) and indium out-diffusion [15][16][17]. Besides, photoluminescence intensity of the LEDs can be increased, as reported in [18,19].…”

Section: Introductionmentioning

confidence: 96%

Growth modification via indium surfactant for InGaN/GaN green LED

Taib¹,

Ahmad²,

Alias³

et al. 2023

Semicond. Sci. Technol.

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In this work, indium (In) was introduced as a surfactant during growth of high temperature GaN quantum barriers (QBs) and GaN interlayer of InGaN/GaN green LEDs. A reference LED grown without In-surfactant was also included for comparison. Results suggested that the LED growth was improved by introducing the In-surfactant, especially during the growth of the GaN interlayer. The In-surfactant improved the morphology of the interlayer, hence allowed it to serve as a good surface growth for the LED. Moreover, the LED showed the lowest FWHM of each XRD satellite peak when the In-surfactant was introduced in the GaN interlayer, suggesting an effective way to improve the multi-quantum wells (MQWs). The introduction of the In-surfactant in the GaN interlayer and GaN QBs growths shifted the emission wavelength of the corresponding LEDs towards red (λemission = 534 nm) with respect to the reference LED where λemission = 526 nm. Furthermore, the In-surfactant introduction reduced the forward voltage, Vf of the corresponding LEDs down to 4.56 V, compared to the reference LED with Vf of 5.33 V. It also allowed the LEDs to show faster carrier decay lifetime, and hence higher radiative recombination, particularly when it was introduced in the GaN interlayer growth.

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Section: Introductionmentioning

confidence: 96%

Growth modification via indium surfactant for InGaN/GaN green LED

Taib¹,

Ahmad²,

Alias³

et al. 2023

Semicond. Sci. Technol.

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“…Numerous research groups have investigated PL spectroscopy of AlGaN alloys grown via metalorganic vapor phase epitaxy (MOVPE) [21][22][23]. Molecular beam epitaxy (MBE), being a crucial epitaxial technique, offers unique advantages in fundamental research owing to its ultra-high vacuum conditions and employment of ultra-high purity metal sources [24][25][26]. Epitaxial growth conditions, including growth temperature, growth mode, and V/III ratio, significantly impact material quality [27].…”

Section: Introductionmentioning

confidence: 99%

The optical properties of 325 nm AlGaN grown by MBE

Dai,

Yang,

Zhu

et al. 2024

Preprint

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The influence of growth temperature on the crystalline quality and optical properties of AlGaN at 325 nm, grown using plasma-assisted molecular beam epitaxy (MBE), was investigated. The growth temperature exhibited a significant impact on the growth mode and surface morphology. Specifically, at a growth temperature of 750 degrees Celsius, when appropriate Al and Ga flow rates were employed, the AlGaN layer exhibited exceptional surface morphology and favorable optical properties. The optical properties of the AlGaN material were explored, revealing the presence of two distinct non-radiative recombination centers characterized by different activation energies. The minority carrier lifetimes were measured as 560 ps at 10 K and 64 ps at room temperature. The underlying mechanism was analyzed from the perspective of carrier dynamics, shedding light on the observed phenomena.

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