2018
DOI: 10.1016/j.apsusc.2018.07.136
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Effects of 1D disorder on the reciprocal space of rare-earth silicide/Si (1 1 1) epilayers

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“…refs. []). In UHV (base pressure 1 × 10 −8 Pa), after thorough degassing, the native silicon oxide was evaporated by repeated flashes at 1150–1200 °C, and the clean Si surface was slowly cooled until well‐ordered (7 × 7) reconstruction appeared in diffraction and STM (pristine surface similar to that in ref.…”
Section: Methodsmentioning
confidence: 99%
“…refs. []). In UHV (base pressure 1 × 10 −8 Pa), after thorough degassing, the native silicon oxide was evaporated by repeated flashes at 1150–1200 °C, and the clean Si surface was slowly cooled until well‐ordered (7 × 7) reconstruction appeared in diffraction and STM (pristine surface similar to that in ref.…”
Section: Methodsmentioning
confidence: 99%