Effects of a Cu x O Buffer Layer on a SiO x -Based Memory Device in a Vaporless Environment

Abstract

The resistive switching characteristics of the Cu/SiOx/Pt structure (control sample) exhibited a direct correlation to humidity. The H2O vapor formed the Cu oxide at the Cu/SiOx interface, and Cu ions were injected from the Cu oxide into the SiOx layer, thus improving the resistive switching. However, the control sample demonstrated substantial switching dispersion in a vaporless environment. The CuxO layer in the Cu/CuxO/SiOx/Pt structure (CuxO sample) helped the dissolution of Cu ions from the Cu electrode into the SiOx layer, enabling effective electrochemical resistive switching in a vaporless environment. The CuxO sample exhibited low switching dispersion and favorable endurance characteristics in a vaporless environment.

Engraving the Surface of Electrospun Microfibers with Nanoscale Grooves Promotes the Outgrowth of Neurites and the Migration of Schwann Cells

“…Electrospun fibers with grooves on the surface have been developed to control the behaviors of glial cells and/or the outgrowth of neurites. [19][20][21] Owing to the versatility of electrospinning technology,o ne can simply vary the composition, alignment, diameter,and secondary features by tuning the electrospinning parameters.T he methods commonly employed for generating grooves on electrospun fibers involved the use of as pecific mixture of solvents, [22][23][24] laser ablation, [25] stamping, [2] or as pecially designed mold as the collector. [19] These methods either need al ot of trials to determine the appropriate types and ratios of the solvents or fail to push the grooves down to the nanoscale.T here is still ap ressing need to develop as imple method capable of generating nanoscale grooves with the proper dimensions to maximize the alignment and extension of neurites.I tw ill be even more significant if the dimensions of the grooves (i.e., the width of the grooves and the separation between them) can be tightly controlled during the fabrication process.…”

Toward an Understanding of Capping Molecules on Pt Nanoparticles for Hydrogenation: the Key Role of Hydroxyl Groups

“…There are many functional molecules employed as capping agent of Pt NPs, including PVP, [8] oleylamine, [9] PDA, [10] phosphate group, [11] polypeptide, [12] and DNA. [13] Different capping molecules play different roles in influencing the formation process of Pt NPs.…”

Insertion of a Graphene Oxide Layer into a Cu/SiO2/Pt Structure to Overcome Performance Degradation in a Vaporless Environment

“…In our previous work [11], a graphene oxide (GO) layer with a folded, layered structure was used to limit the number of formation sites of Cu conducting filaments, which reduced the switching dispersion in the atmosphere [12]. Although the Cu/SiO 2 /Pt structure had good RS properties in the atmosphere, it had poor RS properties in a vaporless environment [13], which could have caused problems after device packaging. We have already conducted a study in which we fabricated a Cu/Cu x O/SiO 2 /Pt structure to investigate its RS in a vaporless environment [13].The Cu x O layer in the Cu/Cu x O/SiO x /Pt structure helped the dissolution of Cu ions from the Cu electrode into the SiO x layer, enabling electrochemical RS in a vaporless environment.Graphene is a two-dimensional material with superior electrical and mechanical properties [14], making it a very attractive material for many applications such as integrated circuits [15] and mechanical resonators [16].…”

“…In our previous work [11], a graphene oxide (GO) layer with a folded, layered structure was used to limit the number of formation sites of Cu conducting filaments, which reduced the switching dispersion in the atmosphere [12]. Although the Cu/SiO 2 /Pt structure had good RS properties in the atmosphere, it had poor RS properties in a vaporless environment [13], which could have caused problems after device packaging. We have already conducted a study in which we fabricated a Cu/Cu x O/SiO 2 /Pt structure to investigate its RS in a vaporless environment [13].…”

“…Although the Cu/SiO 2 /Pt structure had good RS properties in the atmosphere, it had poor RS properties in a vaporless environment [13], which could have caused problems after device packaging. We have already conducted a study in which we fabricated a Cu/Cu x O/SiO 2 /Pt structure to investigate its RS in a vaporless environment [13].…”