Effects of Ag Doping on the Photoluminescence of ZnO Films Grown on Si Substrates

Zhang, Yang; Zhang, Ziyu; Lin, Bing; Fu, Zhaoming; Xu, Jie

doi:10.1021/jp0538058

Cited by 109 publications

(62 citation statements)

References 21 publications

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“…4 Not only bulk crystal and thin films of ZnO but nano-structured ZnO such as nanowires and nanoparticles have been also intensively studied for various applications. 5 ZnO thin films have been grown by various methods such as spray pyrolysis, 6 sol-gel, 7 sputtering, 8 chemical bath deposition, 9 metal-organic chemical vapor deposition, 10 and atomic layer deposition (ALD). [11][12][13][14][15][16] The ALD method is a special modification of chemical vapor deposition for self-limiting film growth.…”

Section: Introductionmentioning

confidence: 99%

Growth and Characterization of Conducting ZnO Thin Films by Atomic Layer Deposition

Min

An²,

Kim³

et al. 2010

Bulletin of the Korean Chemical Society

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ZnO thin films were grown on Si or SiO2/Si substrates, at growth temperatures ranging from 150 to 400 o C, by atomic layer deposition (ALD) using diethylzinc and water. Despite the large band gap of 3.3 eV, the ALD ZnO films show high n-type conductivity, i.e. low resistivity in the order of 10 -3 Ωcm. In order to understand the high conductivity of ALD ZnO films, the films were characterized with X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, elastic recoil detection, Rutherford backscattering, Photoluminescence, and Raman spectroscopy. In addition, the various analytical data of the ZnO films were compared with those of ZnO single crystal. According to our analytical data, metallic zinc plays an important role for the high conductivity in ALD ZnO films. Therefore when the metallic zinc was additionally oxidized with ozone by a modified ALD sequence, the resistivity of ZnO films could be adjusted in a range of 3.8 × 10-3 ~ 19.0 Ωcm depending on the exposure time of ozone.

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Section: Introductionmentioning

confidence: 99%

Growth and Characterization of Conducting ZnO Thin Films by Atomic Layer Deposition

Min

An²,

Kim³

et al. 2010

Bulletin of the Korean Chemical Society

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“…Shallow level donor impurities create energy levels in the band gap near the conduction band edge and shallow acceptor impurities create energy levels near the valence band edge. With increase in the amount of doping, the density of states of these dopants increase and form a continuum of states 8,9 This might be an indication that the Ag has substituted the Zn in the lattice. This is consistent with the observation from the x-ray results discussed above.…”

Section: Optical Propertiesmentioning

confidence: 99%

“…Doping in ZnO with selective elements offers an effective method to adjust their electrical, optical, magnetic and piezoelectric properties, which is crucial for their practical applications. 8 For ZnO, silver (Ag) is a good candidate for adjusting its optical properties. Ag ions can act as acceptors in ZnO, existing on substitutional Zn sites or in the interstitial form.…”

Section: Introductionmentioning

confidence: 99%

Piezoelectric and opto-electrical properties of silver-doped ZnO nanorods synthesized by low temperature aqueous chemical method

et al. 2015

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In this paper, we have synthesized Zn 1−x Ag x O (x = 0, 0.03, 0.06, and 0.09) nanorods (NRs) via the hydrothermal method at low temperature on silicon substrate. The characterization and comparison between the different Zn 1−x Ag x O samples, indicated that an increasing Ag concentration from x = 0 to a maximum of x = 0.09; All samples show a preferred orientation of (002) direction with no observable change of morphology. As the quantity of the Ag dopant was changed, the transmittances, as well as the optical band gap were decreased. X-ray photoelectron spectroscopy data clearly indicate the presence of Ag in ZnO crystal lattice. A nanoindentation-based technique was used to measure the effective piezo-response of different concentrations of Ag for both direct and converse effects. The value of the piezoelectric coefficient (d 33 ) as well as the piezo potential generated from the ZnO NRs and Zn 1−x Ag x O NRs was found to decrease with the increase of Ag fraction. The finding in this investigation reveals that Ag doped ZnO is not suitable for piezoelectric energy harvesting devices. C 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

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“…52,53 Experimental results show that doping ZnO with Ag can lead to enhanced band edge emission. 21,[54][55][56][57] In this work, Ag-doped ZnO (SZO) films were grown by pulsed laser deposition (PLD). The effects of Ag-doping on the electrical, microstructural, and optical properties of ZnO thin films were assessed.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence study of p-type vs. n-type Ag-doped ZnO films

Myers

Khranovskyy

Jian

et al. 2015

Journal of Applied Physics

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Silver doped ZnO films have been grown on sapphire (0001) substrates by pulsed laser deposition.Hall measurements indicate that p-type conductivity is realized for the films deposited at 500 C and 750 C. Transmission electron microscopy images show more obvious and higher density of stacking faults (SFs) present in the p-type ZnO films as compared to the n-type films. Top view and cross sectional photoluminescence of the n-and p-type samples revealed free excitonic emission from both films. A peak at 3.314 eV, attributed to SF emission, has been observed only for the n-type sample, while a weak neutral acceptor peak observed at 3.359 eV in the p-type film. The SF emission in the n-type sample suggests localization of acceptor impurities nearby the SFs, while lack of SF emission for the p-type sample indicates the activation of the Ag acceptors in ZnO.

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Effects of Ag Doping on the Photoluminescence of ZnO Films Grown on Si Substrates

Cited by 109 publications

References 21 publications

Growth and Characterization of Conducting ZnO Thin Films by Atomic Layer Deposition

Growth and Characterization of Conducting ZnO Thin Films by Atomic Layer Deposition

Piezoelectric and opto-electrical properties of silver-doped ZnO nanorods synthesized by low temperature aqueous chemical method

Photoluminescence study of p-type vs. n-type Ag-doped ZnO films

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