Effects of Al doping on the thermoelectric performance of CoSi single crystal

Li, C. C.; Ren, Wanjie; Zhang, L. T.; Ito, Kazuhiro; Wu, Jiangtao

doi:10.1063/1.2041843

Cited by 25 publications

(13 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2 (b)]. We find that 4% Al substitution is the critical point that induces a sign change of S from negative to positive, again agreeing well with experiments [54,55]. At high Al concentration (>10%) the calculated S is about one half of the experimental values [54,55].…”

Section: B Seebeck Coefficient Resistivity and Power Factorsupporting

confidence: 86%

High Thermoelectric Power Factor in IntermetallicCoSiArising from Energy Filtering of Electrons by Phonon Scattering

et al. 2019

View full text Add to dashboard Cite

Intermetallic compounds are usually poor thermoelectrics due to high electronic densities-of-states at the Fermi level and concomitantly low Seebeck coefficients. However, intermetallic B20-type CoSi has been experimentally shown to attain remarkably large negative values of the Seebeck coefficient. We provide a theoretical explanation for this surprising fact using state-of-the-art first-principles calculations with explicit treatment of electron-phonon interactions. We find that the unique band structure of CoSi, which has both massless and heavy fermion bands near the Fermi level, facilitates strong scattering of the low-energy electrons by phonons into the heavy band, resulting in effective energy filtering and high thermal voltage. Our study predicts that a very large thermoelectric power factor of 80 µW cm −1 K −2 or higher is experimentally accessible in the 300 ∼ 600 K range and highlights a general principle for identifying intermetallic compounds with large thermopower.

show abstract

Section: B Seebeck Coefficient Resistivity and Power Factorsupporting

confidence: 86%

High Thermoelectric Power Factor in IntermetallicCoSiArising from Energy Filtering of Electrons by Phonon Scattering

et al. 2019

View full text Add to dashboard Cite

show abstract

“…Here again, firstly starting from κ 0 behaviour at the µ corresponding to EF . It is seen to show an increasing behaviour similar to the one reported by Jian et al and Li et al for κe [32,37]. From the figure, it is found that, at the EF , the value of κ 0 is ∼ 2.4 x 10 14 Wm −1 K −1 s −1 at 300 K, where 10 14 is the order of τ .…”

Section: Thermal Conductivity (Electronic)supporting

confidence: 82%

“…One of the way through which this can be achieved is by doping of the material. As being one of the prime candidates for advanced thermoelectric applications, many investigations have already been done in order to improve its thermoelectric power, mostly by doping [8,12,[32][33][34][35][36][37]. It has been reported in these studies that transport coefficients of CoSi could be explained by using semi-metallic band structure model [2,3].…”

Section: Introductionmentioning

confidence: 99%

First-priniciple based study of transport properties of non-trivial topological fermions of CoSi

Dutta,

Pandey

2021

Preprint

View full text Add to dashboard Cite

Recently, CoSi has been identified to have unconventional electronic topology due to lack of inversion center in its B20 cubic structure. The electronic topology has been reported to be present at three nodal points found in the band structure. Two of these nodal points are situated at the Γ (G1 & G2) and one at R (R1) point. Based on this, we present a study where various transport coefficients are investigated by using first-principle based DFT method for the temperature (T) range 40-300 K. For the chemical potential (µ) corresponding to energies of these nodal points and at the Fermi level (EF ), 3D constant energy surfaces are constructed. They have shown that the number of states available at energies of these nodal points and the EF follows an increasing trend as R1 > G2 > EF > G1 at T = 0 K. Similar increasing behavior seems to follow by other transport coefficients at different µ with T rise such as electrical conductivity(σ)/relaxation time(τ ) ratio and electronic thermal conductivity (κe/τ = κ 0 ). For example, at T = 100 K, σ/τ ∼ 0.13×10 20 Ω −1 m −1 s −1 at G1 whereas its value reaches ∼ 0.18×10 20 Ω −1 m −1 s −1 at R1 nodal point. However, Seebeck coefficient (S ) seems to follow the trend as G2 > EF > R1 > G1 at any given T. The values of S are obtained to be positive at the µ corresponding to the G2, R1 & EF (except G1) which is increasing with the rise in T. Also, the dominant charge carriers at G1 point are found to be electrons for T < 225 K whereas for T > 225 K, the charge carriers are obtained to be dominated by holes. Furthermore, the doping concentrations have also been calculated for G1 (electron doping ∼ 2.25×10 22 cm −3 ), G2 & R1 points (hole doping ∼ 4.10×10 20 cm −3 & 7.22×10 22 cm −3 , respectively).

show abstract

“…Later, there were several attempts with different dopants and alloys. The effects of Al substitution for Si on the thermoelectric performance of CoSi were investigated in the temperature range from 300 to 973 K . The solubility limit of Al in CoSi 1− x Al x is found to be in the range of x = 0.20–0.30.…”

Section: Cobalt Monosilicide Cosimentioning

confidence: 99%

Silicide Thermoelectrics: Materials for Energy Harvesting

Бурков

2018

Physica Status Solidi (a)

View full text Add to dashboard Cite

The silicide family of thermoelectrics includes more than 15 compounds, among them are semimetals and semiconductors with band gaps ranging from 0.1 to 2.3 eV. The silicides have obvious attractive features as the materials for thermoelectric energy converters. Many of the constituting elements are abundant, have low price, the compounds have good high temperature stability. Another feature of silicides, much less recognized by thermoelectric community, is their compatibility with silicon-based microelectronic technology. It opens a door for development of integrated thermoelectric power sources (energy harvesters) for electronic circuitry of wireless sensors and actuators. Considerable efforts have been undertaken, especially in the past 10 years, in order to develop efficient silicide-based thermoelectric materials. Currently the most efficient silicide thermoelectrics are based on Mg 2 (Si-Sn) alloys, MnSi 1.75 and ReSi 1.75 . This article is a review of the current status of the research on the silicide-based thermoelectric materials. Most of the non-transition metal silicides were intentionally excluded from this review. On the other hand more attention is paid to the silicide materials, which have been not in the research focus; to compounds with topologically nontrivial electronic structure, such as CoSi and SrSi 2 .

show abstract

Effects of Al doping on the thermoelectric performance of CoSi single crystal

Abstract: Thermoelectric properties of heavily GaP-and P-doped Si 0.95 Ge 0.05

Cited by 25 publications

References 8 publications

High Thermoelectric Power Factor in IntermetallicCoSiArising from Energy Filtering of Electrons by Phonon Scattering

High Thermoelectric Power Factor in IntermetallicCoSiArising from Energy Filtering of Electrons by Phonon Scattering

First-priniciple based study of transport properties of non-trivial topological fermions of CoSi

Silicide Thermoelectrics: Materials for Energy Harvesting

Contact Info

Product

Resources

About