Effects of AlInGaN electron barrier layer with different aluminum components on the photoelectric properties of GaN-based laser
Wenjie Wang,
Mingle Liao,
Siyuan Luo
et al.
Abstract:The effects of AlInGaN electron barrier layer (EBL) on the photoelectric properties of gallium nitride laser with reduced polarization of different aluminum components is numerically simulated by crosslight software. Compared with the Al0.322In0.08Ga0.598N EBL, the Al0.447In0.174Ga0.379N EBL with higher Al component improves the photoelectric performance of laser, achieving lower threshold current and higher output power. The reason is that the use of Al0.447In0.174Ga0.379N electron barrier material with highe… Show more
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