Effects of alloy composition and Si-doping on vacancy defect formation in (In<i>x</i>Ga1–<i>x</i>)2O3 thin films

Prozheeva, Vera; Hölldobler, R.; Wenckstern, Holger von; Grundmann, Marius; Tuomisto, Filip

doi:10.1063/1.5022245

Cited by 13 publications

(9 citation statements)

References 142 publications

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“…Past z = 5 mm, there is a rapid reduction (increase) in In (Ga) content. This is a common feature for combinatorial (In,Ga) 2 O 3 thin films ,, deposited under oxygen-poor conditions, as detailed in ref . The hexagonal InGaO 3 phase is seen in the XRD regardless of the substrate chosen.…”

Section: Results and Discussionmentioning

confidence: 66%

“…Figure b shows that the β-Ga 2 O 3 phase is (01) oriented. ,, This holds true for the majority of the film. Figure d shows that the In 2 O 3 dominated region of the film grows with (111) orientation, although a small peak just to the left of the 222 peak (∼29°) is also visible which originates from the 0004 reflection from the hexagonal InGaO 3 phase, consistent with Figure c. − , In both plots we also see the 006 and 00 12 peaks due to the sapphire substrate, which have been left unlabeled. It is clear the (In x Ga 1– x ) 2 O 3 material is crystalline across the whole film (and so the whole composition range).…”

Section: Results and Discussionmentioning

confidence: 68%

“…Figure 2b shows that the β-Ga 2 O 3 phase is (201) oriented. 8,9,19 This holds true for the majority of the film. Figure 2d shows that the In 2 O 3 dominated region of the film grows with (111) orientation, although a small peak just to the left of the 222 peak (∼29°) is also visible which originates from the 0004 reflection from the hexagonal InGaO 3 phase, consistent with Figure 2c.…”

Section: Resultsmentioning

confidence: 82%

“…Figure 2d shows that the In 2 O 3 dominated region of the film grows with (111) orientation, although a small peak just to the left of the 222 peak (∼29°) is also visible which originates from the 0004 reflection from the hexagonal InGaO 3 phase, consistent with Figure 2c. [8][9][10]19 In both plots we also see the 006 and 00 12 peaks due to the sapphire substrate, which have been left unlabeled. It is clear the (In x Ga 1−x ) 2 O 3 material is crystalline across the whole film (and so the whole composition range).…”

Section: Resultsmentioning

confidence: 99%

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Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors

Swallow

Palgrave

Murgatroyd

et al. 2021

ACS Appl. Mater. Interfaces

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The electronic and optical properties of (In x Ga1–x )2O3 alloys are highly tunable, giving rise to a myriad of applications including transparent conductors, transparent electronics, and solar-blind ultraviolet photodetectors. Here, we investigate these properties for a high quality pulsed laser deposited film which possesses a lateral cation composition gradient (0.01 ≤ x ≤ 0.82) and three crystallographic phases (monoclinic, hexagonal, and bixbyite). The optical gaps over this composition range are determined, and only a weak optical gap bowing is found (b = 0.36 eV). The valence band edge evolution along with the change in the fundamental band gap over the composition gradient enables the surface space-charge properties to be probed. This is an important property when considering metal contact formation and heterojunctions for devices. A transition from surface electron accumulation to depletion occurs at x ∼ 0.35 as the film goes from the bixbyite In2O3 phase to the monoclinic β-Ga2O3 phase. The electronic structure of the different phases is investigated by using density functional theory calculations and compared to the valence band X-ray photoemission spectra. Finally, the properties of these alloys, such as the n-type dopability of In2O3 and use of Ga2O3 as a solar-blind UV detector, are understood with respect to other common-cation compound semiconductors in terms of simple chemical trends of the band edge positions and the hydrostatic volume deformation potential.

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Section: Results and Discussionmentioning

confidence: 66%

Section: Results and Discussionmentioning

confidence: 68%

Section: Resultsmentioning

confidence: 82%

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors

Swallow

Palgrave

Murgatroyd

et al. 2021

ACS Appl. Mater. Interfaces

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“…[ 74,75 ] Interestingly, in the family of sesquioxides, these unusual features appear to be exclusive to β‐Ga 2 O 3 . The anisotropy is ordinary, close to being nonmeasurable in, e.g., bixbyite In 2 O 3 [ 77,78 ] or α‐Al 2 O 3 . [ 79 ] Further studies are needed to elucidate the roles of the lattice and electronic structures on the defect character and positron annihilation signals.…”

Section: “Complex” Oxidesmentioning

confidence: 99%

Identification of Point Defects in Multielement Compounds and Alloys with Positron Annihilation Spectroscopy: Challenges and Opportunities

Tuomisto

2021

Physica Rapid Research Ltrs

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Three topical materials systems are discussed from the point of view of point defect characterization with positron annihilation spectroscopy. The family of III‐nitride semiconductors and device structures made thereof poses interesting challenges for data interpretation due to preferential localization and annihilation with various elements. Semiconducting oxides with relatively complex crystal lattice structures further highlight the need for combining systematically designed experiments with state‐of‐the‐art theoretical calculations. High‐entropy alloys generate another challenge due to the large number of randomly distributed elements, combining chemical disorder with structural order.

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Demonstration of Two Multi‐Component Target Ablation Approaches and Their Application in Combinatorial Pulsed Laser Deposition

Jörns,

von Wenckstern,

Vogt

et al. 2024

Advanced Physics Research

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Combinatorial pulsed laser deposition (C‐PLD) based on segmented targets has led to new possibilities in the pace of discovery of novel advanced materials with significantly reduced deposition time and material consumption. However, fabrication of established segmented targets may be complex or not even possible for certain material combinations. In this article, two alternative C‐PLD techniques based on easy‐to‐fabricate segmented targets are presented. One approach uses two semi‐circular segments A and B with a systematic adjustable lateral shift of the target rotation axis from the target center. The other approach is based on a new target design defined by an ABA‐segmentation where B is a horizontal bar between two semi‐circular segments of A. Both approaches enable growth of discrete composition libraries. The concepts and important parameters are introduced and computer simulations as function of the geometric parameters are made to yield the expected thin film compositions. As proof‐of‐concept, the techniques are employed on the transparent, semiconducting ternary alloy zinc‐tin‐oxide. The simulations are in very good agreement with the experimental data. Physical properties of films grown by the demonstrated approaches are compared with those obtained by established PLD processes.

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Effects of alloy composition and Si-doping on vacancy defect formation in (InxGa1–x)2O3 thin films

Abstract: Preface my mum and brother. I thank my friends for being present in my life irrespective of time zones and geographical locations. Katariina, there is no better flatmate than you. Simon, thank you. Lastly, thank you, Reader, for your interest in this work.

Cited by 13 publications

References 142 publications

Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors

Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors

Identification of Point Defects in Multielement Compounds and Alloys with Positron Annihilation Spectroscopy: Challenges and Opportunities

Demonstration of Two Multi‐Component Target Ablation Approaches and Their Application in Combinatorial Pulsed Laser Deposition

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