Effects of an additional magnetic field in ITO thin film deposition by magnetron sputtering

Heo, Kyong Chan; Sohn, Youngku; Gwag, Jin Seog

doi:10.1016/j.ceramint.2014.08.111

Cited by 27 publications

(7 citation statements)

References 15 publications

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“…126,129,189,[195][196][197] Different plasma applications necessitate various types of plasma sources, and the applications need the design of plasma processes. Plasma sources operated at low operational frequencies, such as DC 109,121,123,125 and pulsed DC, 102,115 were used in physical vapor deposition (PVD) and plasma-enhanced chemical vapor deposition (PECVD) processes for industrial applications. In addition, mid-frequency (MF), RF, VHF, UHF, and microwave were used in PVD, PECVD, and plasma etching applications.…”

Section: A Aspects Of Ms Involving Plasma Physics Diagnostics and Che...mentioning

confidence: 99%

“…[126][127][128][129] The MS device consists of two electrodes, the cathode and the anode. Electric power (rate of change of energy) in the form of DC, [109][110][111][112]121,123,125 pulsed DC, 102,115 or radio frequency (RF) power 105,129 is applied through the cathode to create an MS plasma process. Based on the nature of applied electric power, the MS devices are categorized as direct current (DC), 116,120,122 pulsed DC, 115 mid-frequency (MF), 113 and radio frequency (RF).…”

Section: Introductionmentioning

confidence: 99%

“…Based on the nature of applied electric power, the MS devices are categorized as direct current (DC), 116,120,122 pulsed DC, 115 mid-frequency (MF), 113 and radio frequency (RF). 118,121,122,124,125 The progress in the study of MS devices led to the development of the high-power impulse magnetron sputtering (HIPIMS) 130 process. Based on the geometry and orientation of the cathodes, the design of MS devices is known as conventional MS (CMS) or planar MS, 99,108 dual MS (DMS), 102,113 facing target MS (FTMS), 105 cylindrical MS (CYMS), 107 and three-dimensional MS (3DMS).…”

Section: Introductionmentioning

confidence: 99%

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Overall aspect for designing magnetron sputtering plasma sources and their applications in the deposition of ITO films

Nisha,

Sahu

2024

AIP Advances

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This work reports a systematic review of the studies of magnetron sputtering (MS) discharges and their utilities for the deposition of transparent coating oxide thin films like indium tin oxides (ITOs). It collates the overall information of plasma science, diagnostics, and chemistry and their usefulness in controlling the plasma process, film growth, and properties. It discusses studies on various MS systems and their capabilities and reports scientific aspects like the formation of instability and plasma flares to understand the various discharge phenomena. The study also discusses various issues, progress, and challenges in ITO films for industrial applications. In addition, this work highlights the importance of plasma parameters and energy flux on thin film growth and film properties.

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Section: A Aspects Of Ms Involving Plasma Physics Diagnostics and Che...mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Overall aspect for designing magnetron sputtering plasma sources and their applications in the deposition of ITO films

Nisha,

Sahu

2024

AIP Advances

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“…ITO thin film layers can be grown using several fabrication methods, such as nebulizer spray pyrolysis (NSP) [ 40 ], spray pyrolysis [ 41 ], pulsed laser deposition [ 42 ], thermal evaporation [ 43 ], chemical sol-gel processes [ 44 ], magnetron sputtering [ 45 , 46 ], and vapor deposition [ 47 ]. Each technique has its advantages and disadvantages [ 48 ].…”

Section: Deposition Of Ito Thin Films By Various Techniquesmentioning

confidence: 99%

A Brief Review of Transparent Conducting Oxides (TCO): The Influence of Different Deposition Techniques on the Efficiency of Solar Cells

et al. 2023

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Global-warming-induced climate changes and socioeconomic issues increasingly stimulate reviews of renewable energy. Among energy-generation devices, solar cells are often considered as renewable sources of energy. Lately, transparent conducting oxides (TCOs) are playing a significant role as back/front contact electrodes in silicon heterojunction solar cells (SHJ SCs). In particular, the optimized Sn-doped In2O3 (ITO) has served as a capable TCO material to improve the efficiency of SHJ SCs, due to excellent physicochemical properties such as high transmittance, electrical conductivity, mobility, bandgap, and a low refractive index. The doped-ITO thin films had promising characteristics and helped in promoting the efficiency of SHJ SCs. Further, SHJ technology, together with an interdigitated back contact structure, achieved an outstanding efficiency of 26.7%. The present article discusses the deposition of TCO films by various techniques, parameters affecting TCO properties, characteristics of doped and undoped TCO materials, and their influence on SHJ SC efficiency, based on a review of ongoing research and development activities.

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“…However, the preparation of graphene often requires chemical vapor deposition to be beneficially deposited on the substrate, and its uniformity and layer number also need to be effectively controlled [ 29 , 30 ]. In contrast, indium tin oxide (ITO) thin films have become essential for the substrate due to their excellent optoelectronic properties [ 31 , 32 ]. Furthermore, ITO is an n-type semiconductor with a wide bandgap of 3.3 to 4.3 eV at room temperature and exhibits a higher carrier density [ 33 ].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Three-Dimensional ZnO: Ga@ITO@Ag SERS-Active Substrate for Sensitive and Repeatable Detectability

et al. 2022

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Vertically aligned ZnO: Ga nanotowers can be directly synthesized on a glass substrate with a ZnO seed film via the chemical bath method. A novel heterostructure of ZnO: Ga@ITO@Ag nanotowers was subsequently deposited in the ITO layer and Ag nanoparticles via the facile two-step ion-sputtering processes on the ZnO: Ga nanotowers. The appropriate ion-sputtering times of the ITO layer and Ag nanoparticles can benefit the fabrication of ZnO: Ga@ITO@Ag nanotowers with higher surface-enhanced Raman scattering (SERS) enhancement in detecting rhodamine 6G (R6G) molecules. Compared with ZnO: Ga@Ag nanotowers, ZnO: Ga@ITO@Ag nanotowers exhibited a high SERS enhancement factor of 2.25 × 108 and a lower detection limit (10−14 M) for detecting R6G molecules. In addition, the ITO layer used as an intermediate layer between ZnO: Ga nanotowers and Ag nanoparticles can improve SERS enhancement, sensitivity, uniformity, reusability, detection limit, and stability for detecting amoxicillin molecules. This phenomenon shall be ascribed to the ITO layer exhibiting a synergistic Raman enhancement effect through interfacial charge transfer for enhancing SERS activity. As a result, ZnO: Ga@ITO@Ag nanotowers can construct a three-dimensional SERS substrate for potential applications in environmentally friendly and cost-effective chemical or drug detection.

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Effects of an additional magnetic field in ITO thin film deposition by magnetron sputtering

Cited by 27 publications

References 15 publications

Overall aspect for designing magnetron sputtering plasma sources and their applications in the deposition of ITO films

Overall aspect for designing magnetron sputtering plasma sources and their applications in the deposition of ITO films

A Brief Review of Transparent Conducting Oxides (TCO): The Influence of Different Deposition Techniques on the Efficiency of Solar Cells

Fabrication of Three-Dimensional ZnO: Ga@ITO@Ag SERS-Active Substrate for Sensitive and Repeatable Detectability

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