Abstract:The photocatalytic properties of SnSe nanostructures (NSs) and SnSe/graphene nanocomposites with different graphene concentrations (5, 10, and 15 wt%/v) were investigated. The products were synthesized by a simple and cost-effective co-precipitation method. The samples obtained demonstrated that graphene concentration at an optimum amount was an important factor in enhancing the photocatalytic performance of the products. The graphene source was graphene oxide (GO) sheets and several characterization results i… Show more
“…We have also performed X‐ray diffraction (XRD) analysis and X‐ray photoelectron spectroscopy (XPS) of the SnSe sample as shown in Figure S4 in the Supporting Information, whose peak positions coincided well with those of previous studies of SnSe . The results indicated our SnSe sample has a good crystalline quality but slightly oxidized at the surface by aqueous dispersion process as seen in additional XPS peak of Sn‐3d around 497 eV which is good agreement with the XPS peak observed in SnO 2 …”
Until now, III-V semiconductors have been primarily employed for commercial SAs because of their certified stabilities and performance. However, they suffer from limited operating bandwidth and expensive fabrication costs, which demand the development of new costeffective broadband SAs, ideally with more superior performance. To this end, a variety of materials have been investigated thus far, which include carbon nanotubes, [5][6][7][8][9][10][11][12] black phosphorus, [13][14][15][16][17][18] gold nanoparticles [19][20][21][22][23] and/or nanorods, [24] filled-skutterudites, [25] and topological insulators (TIs). [26][27][28][29][30][31][32][33][34][35][36][37][38][39][40] Recently, enormous research efforts have been dedicated to 2D materials such as graphene, [41][42][43][44][45][46][47][48] graphene oxide, [49] phosphorene, [50] and transition-metal dichalcogenides (TMDCs), as well as MXene that was first suggested by our recent study indi-
“…We have also performed X‐ray diffraction (XRD) analysis and X‐ray photoelectron spectroscopy (XPS) of the SnSe sample as shown in Figure S4 in the Supporting Information, whose peak positions coincided well with those of previous studies of SnSe . The results indicated our SnSe sample has a good crystalline quality but slightly oxidized at the surface by aqueous dispersion process as seen in additional XPS peak of Sn‐3d around 497 eV which is good agreement with the XPS peak observed in SnO 2 …”
Until now, III-V semiconductors have been primarily employed for commercial SAs because of their certified stabilities and performance. However, they suffer from limited operating bandwidth and expensive fabrication costs, which demand the development of new costeffective broadband SAs, ideally with more superior performance. To this end, a variety of materials have been investigated thus far, which include carbon nanotubes, [5][6][7][8][9][10][11][12] black phosphorus, [13][14][15][16][17][18] gold nanoparticles [19][20][21][22][23] and/or nanorods, [24] filled-skutterudites, [25] and topological insulators (TIs). [26][27][28][29][30][31][32][33][34][35][36][37][38][39][40] Recently, enormous research efforts have been dedicated to 2D materials such as graphene, [41][42][43][44][45][46][47][48] graphene oxide, [49] phosphorene, [50] and transition-metal dichalcogenides (TMDCs), as well as MXene that was first suggested by our recent study indi-
“…26 For the electronic configuration, XPS spectra clearly exhibited the Ag 3d 3/2 and 3d 5/2 peaks ( Figure 3B Figure 3D), the strong peak at 532.2 eV was attributed to Ag-O-C bonds, such a connection between AgCl QDs and rGO sheets is very helpful for the electron transfer between them. 27 A weaker peak at 532.6 eV in the O 1s high-resolution spectrum of bare AgCl QDs could be attributed to the oxygen observed on the surface of the samples. 28 Figure 3E presents the C1s spectra of the rGO/ AgCl QDs and GO.…”
Section: Resultsmentioning
confidence: 94%
“…For the electronic configuration, XPS spectra clearly exhibited the Ag 3d 3/2 and 3d 5/2 peaks (Figure B) at about 367.5 and 373.5 eV and Cl 2p 5/2 and Cl 2p 3/2 peaks (Figure C) at 197.8 eV and 199.5 eV, respectively, which confirmed that Ag and Cl are in the +1 and −1 valence states in both AgCl QDs and rGO/AgCl QDs. Two peaks can be observed in the O 1s high‐resolution spectrum of rGO/AgCl QDs (Figure D), the strong peak at 532.2 eV was attributed to Ag–O–C bonds, such a connection between AgCl QDs and rGO sheets is very helpful for the electron transfer between them . A weaker peak at 532.6 eV in the O 1s high‐resolution spectrum of bare AgCl QDs could be attributed to the oxygen observed on the surface of the samples .…”
A novel rGO/AgCl QDs composites have been obtained by an ultrasonic‐assisted method for the first time. Photoelectrocatalytic (PEC) performances of the obtained samples were studied by the degradation of 20 mg/L Tetracycline (TC) under visible light irradiation with an applied bias potential of 1.5 V (vs Ag/AgCl). Degradation of TC by different processes including Photocatalysis (PC), Electrocatalysis (EC), and PEC was compared, and the effect of different bias potential on the PEC degradation of TC was discussed. Results showed that rGO/AgCl QDs composites had displayed superior PEC activity than that of pristine AgCl QDs with degrading 85.2% of TC during 120 minutes, which was about 1.5 times higher than that of AgCl QDs (33%). Besides, compared to PC and EC removal of TC, PEC process showed the highest degradation efficiency of TC (85.2%) by rGO/AgCl QDs, which was about three times and one time higher than that of PC (39.18%) and EC (20.73%) system, respectively. Moreover, the reusibility and stability of the samples were tested by five times cycling tests, and results demonstrated that the stability of bare AgCl QDs was improved after the introduction of rGO. The enhanced PEC activity and stability of the samples could be attributed to the intimate contact between rGO and AgCl QDs and external electric field, which had benefitted the formation of more active sites and accelerated electron‐hole separation.
“…These peaks, which were identified as the Sn(2+) oxidation state, showed that the SnSe phase is well-defined in the fabricated thin films. Moreover, distinctive peaks at 486.3 and 494.7 eV representing the Sn(4+) oxidation state were seen in the 1 min-heated sample, demonstrating that the remnant SnSe 2 phase rapidly transitions to the SnSe phase with heat treatment 33,59 .Fig. 5Compositional engineering of SnSe thin films for hole doping.…”
The discovery of SnSe single crystals with record high thermoelectric efficiency along the b-axis has led to the search for ways to synthesize polycrystalline SnSe with similar efficiencies. However, due to weak texturing and difficulties in doping, such high thermoelectric efficiencies have not been realized in polycrystals or thin films. Here, we show that highly textured and hole doped SnSe thin films with thermoelectric power factors at the single crystal level can be prepared by solution process. Purification step in the synthetic process produced a SnSe-based chalcogenidometallate precursor, which decomposes to form the SnSe2 phase. We show that the strong textures of the thin films in the b–c plane originate from the transition of two dimensional SnSe2 to SnSe. This composition change-driven transition offers wide control over composition and doping of the thin films. Our optimum SnSe thin films exhibit a thermoelectric power factor of 4.27 μW cm−1 K−2.
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