Effects of annealing process and Mn substitution on structure and ferroelectric properties of BiFeO3 films

Dielectric tunability of highly (l00)-oriented Fe-doped Na0.5Bi0.5TiO3 thin film

“…This suggests that grain growth is limited more and more seriously with the increasing content of ion-doping, which is also been observed in the other thin films such as Mn-doped BiFeO 3 and Fe-doped Ba 0.65 Sr 0.35 TiO 3 thin films [13,14].…”

Pulse laser deposition of BiFeO3films by polished targets

“…In recent years, BiFeO 3 has been intensively researched for its potential application in multifunctional devices due to the coexistence of ferroelectricity (Curie temperature 830ºC) and antiferromagnetisim (Neel temperature 370 ºC) [1][2][3]. As a new lead free ferroelectric material, the polarization value of BiFeO 3 film can be as high as 110μc/cm 2 , which is close to the polarization value of PbTiZrO3 [4].…”

Synthesis, microstructure and properties of BiFeO₃-based multiferroic materials: A review

“…Some authors suggest that small amounts of this dopant decrease the electrical conductivity of BiFeO 3 materials [140,147], but some others describe an increase in conductivity with the increase in the amount of manganese [60,141,148]. For example, Selbach et al [60] reported that, since BiFeO 3 is a p-type semiconductor, doping with Mn 3+ will lead to an increase of the electrical conductivity because the oxygen hyper-stoichiometry produced by the partial oxidation of Mn 3+ to Mn 4+ rises the concentration of cationic vacancies.…”