Effects of Annealing Temperature and Gas on Pentacene OTFTs With HfLaO as Gate Dielectric

Deng, Linfeng; Liu, Y. R.; Choi, Hyun‐Seok; Xu, Jing; M., C.; Lai, P.T.

doi:10.1109/tdmr.2011.2169797

Cited by 4 publications

(1 citation statement)

References 26 publications

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“…The reduction in channel length also results in lower switching power dissipation [28], [29] realizing small channel lengths, especially using mass printing techniques, understanding and minimization of degradation in saturation and subthreshold characteristics due to shortchannel effects is also very important. There have been many investigations of subthreshold characteristics of OTFT, which have highlighted the importance of different factors, including semiconductor-insulator (S/I) interface [39], [40], traps and their distributions [41]- [43], bulk property of organic semiconductors [44], [45], the role of dielectric material [46], [47], and so forth. These investigations have also resulted in some guidelines for suppressing the OFF-state leakage current, such as use of mesa-like structure [45].…”

Section: Introductionmentioning

confidence: 99%

Impact of Contact Placement on Subthreshold Characteristics of Organic Thin-Film Transistors

Islam

Mazhari

2014

IEEE Trans. Electron Devices

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The impact of placing source/drain contacts at the bottom or on top of semiconductor film on subthreshold characteristics of organic thin-film transistors is investigated using 2-D numerical simulations. It is shown that placement of contact on the top allows gate to have more influence over the potential in the semiconductor, especially close to the top where most of current in OFF-state flows. As a result, subthreshold swing and ON-OFF current ratios are best when both contacts are on the top and worst when both are at the bottom. Asymmetric structures with one contact on top and the other at bottom show intermediate performance. However, the use of a stack of two dissimilar metals with appropriate properties can allow an asymmetric structure with bottom source and top drain contact to have OFF-state characteristics, which are even superior to those observed in top-contact transistors.Index Terms-ON-OFF current ratio, OFF-state current, organic thin film transistor (OTFT), subthreshold slope.

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Section: Introductionmentioning

confidence: 99%

Impact of Contact Placement on Subthreshold Characteristics of Organic Thin-Film Transistors

Islam

Mazhari

2014

IEEE Trans. Electron Devices

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Enhanced electrical performance in graphene field-effect transistors through post-annealing of high-k HfLaO gate dielectrics

Liu,

Li,

Qian

et al. 2024

APL Materials

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High-k gate dielectrics have attracted a great deal of attention in the investigation of transistors due to their unique properties such as superior gate controllability. However, their integration into graphene field-effect transistors (GFETs) remains problematic and the physical mechanisms governing the performance of these devices are still not fully understood. In this study, the effects of post-annealing on GFETs utilizing the high-k HfLaO ternary oxide as the gate dielectric were comprehensively investigated. The HfLaO film was deposited on top of graphene by magnetron sputtering, and the device performance with various post-annealing temperatures was conducted. It was found that post-annealing temperature can effectively increase the dielectric constant through balancing the oxygen-vacancy defects and moisture absorption. Both the surface morphology of HfLaO and performance of GFETs were investigated, and the fabricated GFETs exhibit notable electrical performance enhancements. Specifically, GFETs with a 200 °C post-annealed HfLaO gate dielectric demonstrate the optimal device performance, featuring a minimal Dirac point voltage (VDirac) of 1.1 V and a minimal hysteresis (ΔVDirac) of 0.5 V. The extracted hole and electron mobilities are 4012 and 1366 cm2/V · s, respectively, nearly one order of magnitude higher than that of GFETs with as-deposited HfLaO. This work outperforms other existing GFETs utilizing high-k gate dielectric and chemical vapor deposition grown graphene in terms of both carrier mobility and on–off ratio. It is also noted that the excessive post-annealing temperature can negatively impact the GFET performance through introducing oxygen vacancies, increasing the surface roughness, lowering the breakdown voltage, and inducing recrystallization.

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Effects of fluorine plasma and ammonia annealing on pentacene thin-film transistor with ZrLaOx as gate dielectric

Han

Lai

Leung

et al. 2012

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology

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Pentacene organic thin-film transistor (OTFT) based on ZrLaO x gate dielectric is proposed and has been fabricated. The effects of fluorine plasma and ammonia annealing on the properties of the OTFT have been studied. It reveals that the plasma treatment can greatly improve carrier mobility and shift the threshold voltage in the positive direction. With a threshold voltage less than 0.5 V, the OTFT can work at very low supply voltage. On the other hand, the ensuing ammonia annealing counteracts the plasma treatment and shifts the threshold voltage in the opposite direction.

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Effects of Annealing Temperature and Gas on Pentacene OTFTs With HfLaO as Gate Dielectric

Cited by 4 publications

References 26 publications

Impact of Contact Placement on Subthreshold Characteristics of Organic Thin-Film Transistors

Impact of Contact Placement on Subthreshold Characteristics of Organic Thin-Film Transistors

Enhanced electrical performance in graphene field-effect transistors through post-annealing of high-k HfLaO gate dielectrics

Effects of fluorine plasma and ammonia annealing on pentacene thin-film transistor with ZrLaOx as gate dielectric

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