Effects of annealing temperature on the characteristics of ALD-deposited HfO2 in MIM capacitors

Study of roughness evolution and layer stacking faults in short-period atomic layer deposited HfO2/Al2O3 multilayers

“…Many new complementary metal-oxide-semiconductor or compact capacitor architectures can be achieved by employing high-j oxides. 5 Such phenomenon takes place due to crystallization, that leads to the reorganization of atoms and the formation of defects. 3 Atomic layer deposition (ALD) has become the standard growth method for obtaining high-j oxides with controlled thickness.…”

Physical, Electrical, and Reliability Characteristics of Multi-Step Deposition-Annealed HfO2 Film

“…As shown, the HfO 2 capacitor that underwent a single-step deposition-annealing process has a higher leakage current density than the non-annealed samples possibly because of grain boundary diffusion of annealed crystallized HfO 2 film. 9 The capacitors that included a multi-step annealed HfO 2 film had a lower gate leakage current density than those with a single-step annealed HfO 2 film. For the same EOT value, the four-step deposition-annealed HfO 2 capacitors have a higher leakage than the two-step deposition-annealed samples.…”

“…Many studies have reported that the annealing of HfO 2 film at a high temperature (>700 o C) would crystallize HfO 2 film, which forms grain boundaries that act as leakage paths and diffusion paths for impurities [8,9]. The formation of HfO 2 gate dielectric by multi-step deposition-annealing process was proposed to produce discontinuous grain boundaries, reducing the leakage current [10].…”

Electrochemical atomic layer deposition of copper nanofilms on ruthenium

“…The late Mike Weaver et al repeated that process, performing up to 8 cycles, in what appears to be the first example of electrochemical ALD of a pure element [38]. The process of surface limited redox replacement has been described in more depth elsewhere [45][46][47].…”