Effects of Annealing Temperature on Crystal Quality and Photoelectric Properties of Al-Doped ZnO Thin Film

Deshuang, 郭德双 Guo; Zinan, 陈子男 Chen; Dengkui, 王登魁 Wang; Jilong, 唐吉龙 Tang; Xuan, 方铉 Fang; Dan, 房丹 Fang; Fengyuan, 林逢源 Lin; Xinwei, 王新伟 Wang; Zhipeng, 魏志鹏 Wei

doi:10.3788/cjl201946.0403002

Cited by 3 publications

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“…The quality of the film is thereby enhanced, resulting in a narrower range of bulk resistance changes. As a result, the film exhibits greater stability as a whole [22]. Sample E7 demonstrates a relatively stable bulk resistance across the entire range of test voltages, with variations occurring only within the same order of magnitude.At voltages ranging from 800 to 1000 V, the bulk resistance ranges from 1.90 × 10 8 to 1.50 × 10 8 Ω, which is sufficient to meet the requirements for MCP operation.…”

Section: Mcp Bulk Resistance Testmentioning

confidence: 99%

Uniformity of AZO conductive film on microchannel plate by atomic layer deposition and effect of annealing on bulk resistance

Zhu,

Xu,

et al. 2023

Mater. Res. Express

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AZO(ZnO/Al2O3) conductive films were deposited in the microchannel of microchannel plate (MCP) by atomic layer deposition (ALD). The prepared films were characterized, including analysis of the thickness and composition uniformity of AZO films. The MCP bulk resistance was also measured, and the effect of annealing treatment on bulk resistance was investigated. The results suggest that the use of trimethylaluminum in the preparation of AZO composite film within the microchannel of MCP leads to corrosion of ZnO, resulting in non-uniformity in film thickness and incorrect composition of the film. The problem was resolved by increasing the pulse time of trimethylaluminum to 500 ms, resulting in the successful preparation of an AZO film with a uniform thickness and composition in the microchannel. After annealing, the bulk resistance of MCP increases while the variation of bulk resistance with voltage decreases. Specifically, the bulk resistance of the MCP having a ZnO/Al2O3 ratio of 7/2 only experiences changes of the same order of magnitude (~108 Ω) after undergoing a 60-minute annealing process in N2 at 300 ℃, thus satisfying the requirements of MCP.

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Section: Mcp Bulk Resistance Testmentioning

confidence: 99%

Uniformity of AZO conductive film on microchannel plate by atomic layer deposition and effect of annealing on bulk resistance

Zhu,

Xu,

et al. 2023

Mater. Res. Express

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show abstract

As40Se60硫系基底连接层制备与性能

Zhang Shunguan,

Li Shan,

Liu Zhuo

et al. 2023

激光与光电子学进展

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Ions beam induced luminescence study of variation of defects in zinc oxide during ion implant and after annealing

Luo¹,

Qiu²,

Wang³

et al. 2020

Acta Phys. Sin.

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<sec>The optical and electrical properties of ZnO related on the type and the concentration of defects in ZnO crystal. Ion implantation and annealing can change the type and the concentration of defects in ZnO. To understand the variation of defects in ZnO during ion implantation and after different temperature annealing, in situ luminescence measurements of ZnO crystal samples were carried out by ion beam induced luminescence (IBIL) during ion implantation of 2 MeV H<sup>+</sup> and then after annealing at 473 K and 800 K in vacuum on the GIC4117 tandem accelerator in Beijing Normal University.</sec><sec>IBIL spectra of ZnO showtwo emission peaks: UV emission, which is called near band emission (NBE), and visible emission, which is called deep band emission (DBE).The high-intensity of DBE and weak NBE of IBIL spectra of ZnOmay be due to the NBE is intrinsic to ZnO samples and therefore is just visibly observed from samples that are virtually defect-free. With the ion implantation, the destruction of the crystal structure and the arising of a mass of defects, inducing the weak intensity NBE and intense DBE.In addition, the overall IBIL spectra of ZnOreveal decrease intensity with the ion fluence,which indicates that the concentration of luminescence centersdecreases duringion implantation.With the H<sup>+</sup> fluence, the concentration of the point defects increases. The point defects migrate and subsequently agglomerate into larger defect clusters. These defect clusters serve as traps for catching electrons and holes, which result in the quenching of luminescence centres. Annealing can help todecompose the defect clusters and repair the defects of crystal. However, amounts of defects and clusters still remain in the irradiated sample annealed at 473 K in vacuum, which acted as nonradiative center and suppress the luminescence induced weak intensity of IBIL. Annealing the sample at 800 K in vacuum may facilitate the decomposition of defect clusters during ion irradiation to point defects and the point defect return to the lattice position that can reduce the nonequilibrium defects inside the crystal and improve the crystallinity of the crystal, which increase the intensity of its IBIL.</sec>

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Effects of Annealing Temperature on Crystal Quality and Photoelectric Properties of Al-Doped ZnO Thin Film

Cited by 3 publications

References 0 publications

Uniformity of AZO conductive film on microchannel plate by atomic layer deposition and effect of annealing on bulk resistance

Uniformity of AZO conductive film on microchannel plate by atomic layer deposition and effect of annealing on bulk resistance

As40Se60硫系基底连接层制备与性能

Ions beam induced luminescence study of variation of defects in zinc oxide during ion implant and after annealing

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