Effects of Annealing Temperature on TiN/Hf_0.5Zr_0.5O₂/TiN Ferroelectric Capacitor Prepared by In-Situ Like Consecutive Atomic Layer Deposition

Improvement in the polarization properties in thin ferroelectric Hf0.5Zr0.5O2 films by two-step flash lamp annealing

“…13,14) To obtain ferroelectricity in HfO 2 -based materials, management of the thermal budget is quite important since they are polymorphic phase materials and the orthorhombic (o-) phase that exhibits ferroelectricity is a meta-stable phase. There have been several studies in which the o-phase can be obtained using various annealing techniques, for example, furnace annealing 15,16) or rapid thermal annealing (RTA) 17,18) with annealing times from seconds to minutes. Using flash lamp annealing (FLA), in which the annealing time is in the millisecond (ms) range and the annealing temperature is high, the ophase can be obtained; [19][20][21] however, there are few reports on FLA for films thinner than 10 nm.…”

Improvement of the Ferroelectric Response of La-Doped Hafnium Zirconium Oxide Employing Tungsten Oxide Interfacial Layer with Back-End-of-Line Compatibility

“…However, many of these previous studies have limitations for practical device applications, particularly in terms of back-end-of-line (BEOL) compatibility, with annealing temperatures ≤400 °C. Annealing in the lower temperature induces lower crystallinity, resulting in decreased 2P r with less orthorhombic phase fraction. − Additional challenges also arise when utilizing HZO grown with chloride-based precursors (e.g., HfCl 4 and ZrCl 4 ), which are widely employed in the industrial field due to their cost effectiveness. − The HZO film by these precursors showed relatively lower 2P r values and a larger wake-up effect compared to cases involving metal–organic (MO) precursors . Given that chloride-based precursors are employed with H 2 O as the reactant gas, it is highly probable that hydrogen atoms (H) are introduced into the HZO films as byproducts. , Since H atoms thermodynamically incorporate along with V o , the presence of the latter might lead to internal field variations and defect distribution, consequently degrading the electrical performance of the capacitors. − Additionally, there has been a lack of comprehensive investigation and engineering regarding trilayer stacks comprising seed, ferroelectric, and capping layers.…”

Fabrication of thin ferroelectric Hf0.5Zr0.5O2 films by millisecond flash lamp annealing

“…Among HfO 2 -based thin films, the HfO 2 -ZrO 2 system (HZO) is an attractive candidate because it has an orthorhombic phase with a composition ratio of around 50%. [11][12][13][14][15][16][17] It is known that the orthorhombic crystal in HZO is in a metastable state, and therefore, it is important to employ appropriate heat treatment process conditions to obtain ferroelectric HZO. 18) The formation of ultra-thin HZO films remains a significant challenge for high integration and low power consumption devices.…”