Effects of annealing temperature on properties of InSnZnO thin film transistors prepared by Co-sputtering

Zhong, Wei; Li, Guoyuan; Lan, Linfeng; Li, Bin; Chen, Rongsheng

doi:10.1039/c8ra06692b

Cited by 50 publications

(30 citation statements)

References 42 publications

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“…The O2 peak centered at ~531.2 eV corresponds to oxygen deficiencies in the lattices, such as VO. The O3 peak centered at ~532.3 eV is attributed to chemisorbed oxygen, such as adsorbed O2, H2O, and the bonded oxygen in -OH groups [21,22]. It is shown that the relative area of the O2 peak is reduced from 27.5% to 14.0% after Al2O3 passivation.…”

Section: Resultsmentioning

confidence: 97%

“…3 (a)-(c), the XPS spectra of the O 1s peak can be divided into three peaks: O1, O2, and O3, and further fitted by the Gaussian-Lorentzian. The O1 peak centered at ~530.4 eV corresponds to the oxygen bonded in the lattices, such as Zn-O, In-O, and Sn-O [21,22]. The O2 peak centered at ~531.2 eV corresponds to oxygen deficiencies in the lattices, such as VO.…”

Section: Resultsmentioning

confidence: 99%

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Self-Assembled Monolayers (SAMs)/Al₂O₃ Double Layer Passivated InSnZnO Thin-Film Transistor

et al. 2020

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We fabricated high-performance InSnZnO (ITZO) thin-film transistors (TFTs) with self-assembled monolayers (SAMs)/Al2O3 double passivation layers (PVLs). The presented SAMs/Al2O3 double passivation leads to high-performance ITZO TFTs with a steep subthreshold slope (∼85 mV/dec), a low threshold voltage (∼0.9 V), high mobility (∼19.8 cm 2 V-1 s-1), and high on-off current ratio (∼8.7 ×10 9). Moreover, compared to devices with Al2O3 PVL, ITZO TFTs with SAMs/Al2O3 double PVLs show better stability in ambient air with a relative humidity of 60% under positive bias stress (PBS) and negative bias stress (NBS). This enhanced stability is attributed to the presence of a highquality SAM/Al2O3 dual PVL, which not only inhibits Vo-related trap sites and reduces overall trap density, but also protects the back-channel from environmental influences.

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Section: Resultsmentioning

confidence: 97%

Section: Resultsmentioning

confidence: 99%

Self-Assembled Monolayers (SAMs)/Al₂O₃ Double Layer Passivated InSnZnO Thin-Film Transistor

et al. 2020

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“…The O 1 sub-peak (529.24 eV) is attributed to the oxygen-bonded metal in lattice, and the O 2 sub-peak (530.09 eV) is attributed to the oxygen-deficient regions related to oxygen vacancies. The O 3 sub-peak (531.13 eV) results from the chemisorbed oxygen related to the formation of metal hydroxide [42][43][44][45][46]. Figure 6b shows the relative area ratio of O 1 , O 2 , and O 3 peaks obtained from the ITO:Zn thin films with varied zinc content.…”

Section: Resultsmentioning

confidence: 99%

Thermoelectric Properties of Zinc-Doped Indium Tin Oxide Thin Films Prepared Using the Magnetron Co-Sputtering Method

et al. 2019

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The thermoelectric properties of In−Sn−O (ITO) thin films were estimated in relation to microstructures with various zinc concentrations. The zinc-doped ITO (ITO:Zn) thin films were amorphized with increasing zinc concentration. The carrier density (n) of the thin films decreased as the zinc content increased, which could be attributed to a decline in oxygen vacancies. The highest Seebeck coefficient (S, 64.91 μV/K) was obtained with an ITO film containing 15.33 at.% of Zn due to the low n value, which also exhibited the highest power factor (234.03 μW K−2 m−1). However, the highest thermoelectric figure of merit value (0.0627) was obtained from the film containing 18.26 at.% of Zn because of both low n and the lowest thermal conductivity (κ) (1.085 W m−1·K−1). The total κ decreased as increasing zinc concentration in the thin films. It was confirmed that the decrease of total κ was dominated by electron κ rather than lattice κ.

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“…For the as-deposited ITZO thin film, the composition of peak 1: peak 2: peak 3 is 67.57%: 26.60%: 5.83% (Figure S4, Supporting Information), which is comparable to the reported data. [52][53][54][55][56] For the untreated ITZO thin film (25 °C), the composition of peak 1: peak 2: peak 3 become 45.51%: 30.25%: 24.24%, as shown in Figure 3a. The relative MV O concentration is slightly increased, compared with the as-deposited ITZO thin film.…”

Section: Mechanism Discussionmentioning

confidence: 99%

Effect of Moisture Exchange Caused by Low‐Temperature Annealing on Device Characteristics and Instability in InSnZnO Thin‐Film Transistors

Chen

Zhang

Deng

et al. 2022

Adv Materials Inter

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Thin‐film transistors (TFTs) in practical operations are inevitably impacted by moisture and temperature. An investigation on the joint effect of environmental moisture and working temperature on device characteristics and instability is becoming necessary. However, few related studies have been performed. In this work, a low‐temperature (LT) annealing in air is proposed to simulate the working conditions of TFTs in display applications. The effect of moisture exchange caused by LT annealing on device characteristics and instability of InSnZnO (ITZO) TFTs is systematically investigated. Combined with X‐ray photoelectron spectroscopy analysis, TCAD design simulation, and the measurement of relative humidity (RH) change on the device surface, a model considering water diffusion and water ionization is proposed. The negative shift of the transfer curve is attributed to the extra electrons released from the water ionization and the positive‐bias‐stress‐induced instability is mainly attributed to the generation of interstitial/substitutional hydrogens and aggregation of hydrogen ions at the backchannel. The temperature and the RH on the device surface jointly determine the moisture diffusion direction. Furthermore, the model is verified by an LT vacuum annealing. The results and the model will be beneficial for the further reliable design of ITZO TFTs in commercial applications.

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Effects of annealing temperature on properties of InSnZnO thin film transistors prepared by Co-sputtering

Abstract: Indium-tin-zinc-oxide (ITZO) as the channel layer grown by co-sputtering of ZnO target and ITO target in the bottom gate thin-film transistors (TFTs) is proposed in this work.

Cited by 50 publications

References 42 publications

Self-Assembled Monolayers (SAMs)/Al₂O₃ Double Layer Passivated InSnZnO Thin-Film Transistor

Self-Assembled Monolayers (SAMs)/Al₂O₃ Double Layer Passivated InSnZnO Thin-Film Transistor

Thermoelectric Properties of Zinc-Doped Indium Tin Oxide Thin Films Prepared Using the Magnetron Co-Sputtering Method

Effect of Moisture Exchange Caused by Low‐Temperature Annealing on Device Characteristics and Instability in InSnZnO Thin‐Film Transistors

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Effects of annealing temperature on properties of InSnZnO thin film transistors prepared by Co-sputtering

Abstract: Indium-tin-zinc-oxide (ITZO) as the channel layer grown by co-sputtering of ZnO target and ITO target in the bottom gate thin-film transistors (TFTs) is proposed in this work.

Cited by 50 publications

References 42 publications

Self-Assembled Monolayers (SAMs)/Al2O3 Double Layer Passivated InSnZnO Thin-Film Transistor

Self-Assembled Monolayers (SAMs)/Al2O3 Double Layer Passivated InSnZnO Thin-Film Transistor

Thermoelectric Properties of Zinc-Doped Indium Tin Oxide Thin Films Prepared Using the Magnetron Co-Sputtering Method

Effect of Moisture Exchange Caused by Low‐Temperature Annealing on Device Characteristics and Instability in InSnZnO Thin‐Film Transistors

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Self-Assembled Monolayers (SAMs)/Al₂O₃ Double Layer Passivated InSnZnO Thin-Film Transistor

Self-Assembled Monolayers (SAMs)/Al₂O₃ Double Layer Passivated InSnZnO Thin-Film Transistor