Effects of Annealing Temperatures on the Structural and Dielectric Properties of ZnO Nanoparticles

El‐Desoky, M. M.; Ali, Mohamad Akbar; Afifi, G.; Imam, Hisham; Al-Assiri, M.S.

doi:10.1007/s12633-016-9445-5

Cited by 40 publications

(12 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These high values are attributed to the presence of space charge polarization created by the electrode sample contact and can be also due to the contribution of different types of polarization mechanism. 30 Besides, the decrease of 3 00 with frequency is explained as follows: by increasing frequency the charge carriers become incapable to pursue the rapid excitation change; hence they lag behind the alternative excitation signal. 31 In other hand, the dielectric loss 3 00 increases with increasing temperature.…”

Section: Dielectric Studiesmentioning

confidence: 99%

Dielectric and electrical properties of annealed ZnS thin films. The appearance of the OLPT conduction mechanism in chalcogenides

et al. 2020

View full text Add to dashboard Cite

show abstract

Section: Dielectric Studiesmentioning

confidence: 99%

Dielectric and electrical properties of annealed ZnS thin films. The appearance of the OLPT conduction mechanism in chalcogenides

et al. 2020

View full text Add to dashboard Cite

show abstract

“…The changes in the crystallite sizes causes to the change in arbitrary interphases which results in the larger volume fraction at interfaces of the nanoparticles with respect to the bulk materials which can influence the dielectric properties. It has been also reported that dielectric constant can be increased with annealing temperature attributed to higher movement rate of dipoles in the sample 63 . Since ZnO is n‐type semiconductor, oxygen vacancies exist at the interface of ZnO nanoparticles causes to the large amount of dipole moments due to the interaction of positive oxygen vacancy and anions.…”

Section: Resultsmentioning

confidence: 98%

“…It has been also reported that dielectric constant can be increased with annealing temperature attributed to higher movement rate of dipoles in the sample. 63 Since ZnO is n-type semiconductor, oxygen vacancies exist at the interface of ZnO nanoparticles causes to the large amount of dipole moments due to the interaction of positive oxygen vacancy and anions. Thus, oxygen vacancies act as shallow donors in the ZnO nanoparticles.…”

Section: Gcd Studiesmentioning

confidence: 99%

Rhinestone sheet like carbon and metal oxide‐based nanocomposites for flexible supercapacitor applications

Chaudhary

Sinha

Mohan

2022

Intl J of Energy Research

View full text Add to dashboard Cite

Summary The increasing thrust lies in developing a better electrode material for supercapacitor applications. Carbon and metal oxide‐based nanocomposites are the latest trend in this research area. In the present work, we are proposing the synthesis of simple, eco‐friendly and cost‐effective reduced graphene oxide (rGO), naturally derived carbon dots (CDs), and zinc oxide (ZnO)‐based rZD ternary nanocomposites. These nanocomposites have been synthesized using eco‐friendly and accessible hydrothermal method at three different temperatures (i.e., 300, 400, and 500°C) and accordingly named as rZD300, rZD400, and rZD500. Further, the morphological (scanning electron microscopy and transmission electron microscopy) characterization studies predicted that ZnO and CDs were attached on to the rGO nanosheets to form the rhinestone sheet like structures. In addition, the crystalline and structural properties have been examined using X‐ray diffraction, Raman, X‐ray Photoelectron Spectroscopy, and X‐ray Absorption Spectroscopy. The electrochemical studies (cyclic voltammetry, galvanostatic charge‐discharge, and electrochemical impedance spectroscopic) predicted that highest capacitance achieved was 796 F/g using 2 M H2SO4 electrolytic solution for rZD500 nanocomposite. Finally, 1.5 V prototype flexible Supercapacitors (FSC) have been also fabricated using carbon cloth substrate for rZD500nanocomposite.

show abstract

“…NPs [15,18,19]. Zulfiqar et al studied basic dielectric properties of ZnO and Co, Mn co-doped ZnO NPs at a particular temperature [20].…”

Section: Different Researchers Like Baset Et Al Mazhdi Et Al El-desoky Et Al Studied Dielectric Properties Of Znomentioning

confidence: 99%

“…As a result, it's crucial to look at the electrical transport and overall dielectric performance of ZnO nanosystems. Dielectric characteristics of ZnO nanorods, nanowires, nanoparticles, and their different composites are studied by numerous researchers [13][14][15]. Schmidt et al studied details about the conductivity of ZnO material with surface modification [16].…”

Section: Introductionmentioning

confidence: 99%

Study of the optical properties and frequency-dependent electrical modulus spectrum to the analysis of electric relaxation and conductivity effect in zinc oxide nanoparticles

Bhunia¹,

Pradhan

Bhunia

et al. 2021

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

In this article, the optical and dielectric properties along with electric relaxation behaviour of the zinc oxide nanoparticles (ZnO NPs) with an average size & 32.5 nm were studied. The band gap, and free carrier concentration of the ZnO NPs have been found to be 3.73 eV, and & 5.55 9 10 12 per cm 3 , respectively. Dispersion parameters and nature of dispersion have been studied from optical spectrum. X-ray diffraction investigation revealed that the crystalline phase is hexagonal with atomic fraction & 75.44%. The overall behaviour of the dielectric constants of ZnO NPs has obeyed Koops model. Relaxation behaviour and defect state response inside ZnO NPs have been observed in the dielectric studies. The relaxation time varies from 8.0585 9 10 -5 to 7.8447 9 10 -5 s with temperature (T) ranges from 323 to 573 K, respectively, calculated from the electric modulus study. The AC conductivity complies the Jonscher's universal power law and the observed hopping of electron is the correlated barrier hopping. The activation energy of the ZnO NPs is found to be & 93 meV from the temperature-dependent DC conductivity analysis. The real part of complex impedance showed a negative temperature coefficient of resistance nature with increase the temperature from 473 to 673 K in the low-frequency zone. The equivalent circuit for the complex impedance analysis at T = 673 K has been studied from Cole-Cole equation and Nyquist plot. The observed properties of ZnO NPs are very important for electric storage, sensing and optical semiconductor devices.

show abstract

Effects of Annealing Temperatures on the Structural and Dielectric Properties of ZnO Nanoparticles

Cited by 40 publications

References 22 publications

Dielectric and electrical properties of annealed ZnS thin films. The appearance of the OLPT conduction mechanism in chalcogenides

Dielectric and electrical properties of annealed ZnS thin films. The appearance of the OLPT conduction mechanism in chalcogenides

Rhinestone sheet like carbon and metal oxide‐based nanocomposites for flexible supercapacitor applications

Study of the optical properties and frequency-dependent electrical modulus spectrum to the analysis of electric relaxation and conductivity effect in zinc oxide nanoparticles

Contact Info

Product

Resources

About